arXiv subjects

Zamin Mamiyev

Publications and source records attributed to Zamin Mamiyev.

8 recordsLinked to original sources

arXiv2026

Ultrafast signatures of Dirac / flat-band hybrid states from time-resolved ARPES

Hybridization of highly itinerant Dirac electrons with localized flat-band states is predicted to yield emergent phenomena such as exotic heavy-fermion behaviour. Epitaxial graphene on two-dimensional adsorbate structures on SiC(0001), which host flat bands, offers a promising platform to explore these effects. However, direct experimental evidence of interlayer hybridization in such systems has so far been lacking. Here, we address this gap using time- and angle-resolved photoemission spectroscopy (trARPES) where interlayer hybridization manifests in three key observations: (1) accelerated Dirac-carrier relaxation arising from additional electronic and phononic decay channels provided by the flat-band subsystem, (2) transient charging of the Dirac cone enabled by direct optical excitation from the flat bands, and (3) ultrafast back-transfer of charge into the flat bands on timescales governed by the interlayer coupling strength. We further demonstrate that the degree of hybridization can be tuned via the atomic number of the atoms intercalated at the graphene-SiC interface, establishing a controllable platform for investigating exotic correlated ground states.

cond-mat.mtrl-sci↗

arXiv2026

Graphene-capped bismuthene on SiC as a platform for correlated quantum spin Hall edge states

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here we realize bismuthene islands by intercalating Bi beneath zero-layer graphene on SiC(0001) followed by hydrogen treatment, yielding well-defined edges with controlled terminations. Spectroscopic measurements demonstrate that the edge states reside inside the bulk band gap and remain charge neutral. The graphene overlayer interacts only weakly with the bismuthene, preserving its topological character while providing environmental protection. Notably, the one-dimensional edge channels exhibit signatures of enhanced electronic correlations relative to freestanding bismuthene, suggesting proximity-induced modification of the QSH edge physics. These results establish graphene-capped bismuthene as a robust and tunable platform for correlated quantum spin Hall states.

cond-mat.mes-hall↗

arXiv2026

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Confinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. However, achieving long-range interfacial order while maintaining high-quality graphene remains a significant challenge. Here, we demonstrate the synthesis of large-area quasi-free-standing monolayer graphene (QFMLG) via the intercalation of a two-dimensional (2D) Sn. While the triangular Sn(1x1) interface exhibits a robust metallic band structure, the decoupled QFMLG maintains charge neutrality, confirmed by photoemission spectroscopy. Using high-resolution Raman spectroscopy and microscopy, we distinguish between direct intercalation and diffusion-driven expansion, identifying the latter as the critical pathway to superior QFMLG crystalline quality. Temperature-dependent analysis reveals dynamical structural coupling between the decoupled QFMLG and the Sn interface, providing a novel degree of freedom for strain engineering. Beyond uncovering the diffusion-driven mechanism, this work establishes metal intercalation as an effective strategy for tailoring durable graphene-metal heterostructures with tunable properties for next-generation quantum materials platforms.

cond-mat.mes-hall↗

arXiv2025

Intercalant-induced Kekule ordering and gap opening in quasi-free-standing graphene

We present a comprehensive investigation of the structural and electronic properties of Sn intercalated buffer layers on SiC(0001) using low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/STS), spot-profile analysis low-energy electron diffraction (SPA-LEED), and density functional theory (DFT) calculations. Sn intercalation effectively decouples the buffer layer, yielding quasi-free-standing monolayer graphene (QFMLG) while introducing local lattice distortions. Bias-dependent STM imaging revealed the coexistence of conventional and Kekule-ordered graphene domains, governed by the underlying Sn(1x1) reconstruction at the SiC interface. The measured STS spectra exhibit good agreement with DFT results. However, achieving homogeneous Sn(1x1) domains remains challenging, apparently, due to strain within the Sn monolayer, which drives the emergence of Kekule distortions and the associated electronic band-gap opening omogeneously in graphene. These findings highlight the crucial role of intercalant homogeneity and strain in tuning graphene`s structural and electronic properties.

cond-mat.mes-hall↗

arXiv2025

From stripes to hexagons: strain-induced 2D Pb phases confined between graphene and SiC

The intercalation of metals beneath graphene offers a powerful route to stabilizing and protecting novel two-dimensional (2D) phases. The epitaxial growth of Pb monolayers on SiC(0001), combined with the relatively large spacing of the suspended graphene, makes this system particularly distinctive. Using low-energy electron diffraction (LEED) and various microscopy techniques -- including scanning electron microscopy (SEM), scanning tunneling microscopy (STM), and low-energy electron microscopy (LEEM) -- we have investigated the intercalation process across multiple length scales. Our analysis reveals the formation of different 2D Pb monolayer phases, such as stripes and hexagons, which emerge due to the interplay between substrate pinning and strain within the Pb layer, depending on local coverage. These findings provide new insights into the strain-driven stabilization of intercalated metal layers and highlight the potential of graphene as a versatile platform for engineering low-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2025

Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface

Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two-dimensional configuration. This work examines Si intercalation of epitaxial graphene on SiC(0001) using three preparation methods. Dangling bond states at the interface were found to undergo a Mott-Hubbard metal-insulator transition as a result of a significant on-site repulsion. Comparing this heterostructure consisting of graphene and a Mott insulator with a similar system without graphene, reveals the screening ability of graphene's conduction electrons on the on-site repulsion. The system presented here can serve as a template for further research on Mott insulators with variable band gap.

cond-mat.mtrl-sci↗

arXiv2025

Mesoscopic scale study of lateral dynamics of Sn-intercalation of the buffer layer on SiC

The dynamics of Sn intercalation of the buffer layer on SiC was investigated with a frozen-in diffusion front using Kelvin Probe Force Microscopy. The technique allows to laterally distinguish between intercalated regions and the pristine buffer layer. Comparing topography features with the surface potential on the mesoscopic scale confirms that surface steps act as transport barriers. The results show a distinct pin hole mechanism for the material flow from terrace to terrace of the vicinal substrate surface. Nucleation and the formation of tin intercalated phase on terraces happen at steps. This results in a mesoscopic growth against the macroscopic diffusion direction.

cond-mat.mes-hall↗

arXiv2024

Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas

Graphene, renowned for its exceptional electronic and optical properties as a robust 2D material, traditionally lacks electronic correlation effects. Proximity coupling offers a promising method to endow quantum materials with novel properties. In this study, we achieve such a proximity coupling by intercalating Sn between the buffer layer of graphene on SiC(0001), allowing us to explore the coupling between a correlated 2D electron gas and a Dirac metal. This results in the stabilization of Sn-$\sqrt{3}$ superlattice structures at the interface, which reveal Mott-Hubbard bands, in excellent agreement with both experimental observations and theoretical predictions. Additionally, we found signatures of quasiparticle peaks close to the Fermi energy, in detail depending on the hybridization strength and doping level.

cond-mat.str-el↗