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Zetian Mi

Publications and source records attributed to Zetian Mi.

At least 19 recordsLinked to original sources
arXiv2026

Ultra-Low-Loss Silicon Nitride on Sapphire for Broad-Transparency Nonlinear and Quantum Photonics

The field of photonic integrated circuits (PIC) has flourished in the past two decades, fueling numerous cutting-edge applications across sensing, networking, data interconnect, and quantum information processing. As a guiding material for PIC, Si$_3$N$_4$ has seen extensive use for its ultra-low loss, broad transparency, and diversity in implementation across both thin and thick films. Although the standard, traditional silicon dioxide (SiO$_2$) on silicon (Si) substrates that underpin the majority of Si$_3$N$_4$ photonics face drawbacks in the form of long-wavelength transparency limited by SiO$_2$, high-stress deposition for anomalous dispersion thick-film Si$_3$N$_4$, and leakage loss to the Si layer for low-confinement thin-film Si$_3$N$_4$. Featuring increased long-wavelength transparency into the mid-infrared, low-stress deposition of Si$_3$N$_4$, and a low index, this work investigates sapphire substrates as alternate hosts for Si$_3$N$_4$ photonics with greater spectral coverage and reduced fabrication complexity. This work presents a robust method of fabricating ultra-low loss photonic integrated circuits on a 500-nm-thick Si$_3$N$_4$-on-sapphire platform, exhibiting record-low losses below $0.1 \rm \;dB/cm$. Implemented using this process are high-Q microrings with intrinsic quality factors in excess of $4.5\times10^6$ and coupled-ring photonic molecules to support nonlinear gain. Leveraging the achievable low loss and high-Q, this work further reports the first demonstration of Kerr-comb and soliton generation on the Si$_3$N$_4$-on-sapphire platform. These advances in loss, quality factor, and soliton generation on this versatile, broad-transparency platform pave the way for future work in spectroscopy and quantum-enhanced sensing across previously prohibited spectral regions for Si$_3$N$_4$ photonics with reduced fabrication complexity.

physics.optics↗
arXiv2026

Modality-Agnostic Prompt Learning for Multi-Modal Camouflaged Object Detection

Camouflaged Object Detection (COD) aims to segment objects that blend seamlessly into complex backgrounds, with growing interest in exploiting additional visual modalities to enhance robustness through complementary information. However, most existing approaches generally rely on modality-specific architectures or customized fusion strategies, which limit scalability and cross-modal generalization. To address this, we propose a novel framework that generates modality-agnostic multi-modal prompts for the Segment Anything Model (SAM), enabling parameter-efficient adaptation to arbitrary auxiliary modalities and significantly improving overall performance on COD tasks. Specifically, we model multi-modal learning through interactions between a data-driven content domain and a knowledge-driven prompt domain, distilling task-relevant cues into unified prompts for SAM decoding. We further introduce a lightweight Mask Refine Module to calibrate coarse predictions by incorporating fine-grained prompt cues, leading to more accurate camouflaged object boundaries. Extensive experiments on RGB-Depth, RGB-Thermal, and RGB-Polarization benchmarks validate the effectiveness and generalization of our modality-agnostic framework.

cs.CV↗
arXiv2026

Region-Resolved Interface Descriptors in III-nitride-nanocluster photocatalysts

Understanding how nanocluster cocatalysts modify the electronic structure of III-nitride surfaces is central to the rational design of efficient photocatalytic interfaces. Here, we introduce a region-resolved first-principles framework for analyzing GaN-, InGaN-, and ScGaN-based slabs decorated with six-atom elemental nanoclusters. Using a region-resolved projected local density of states (PLDOS) analysis, we separate electronic response of nanocluster-covered regions from that of uncovered semiconductor surface regions, revealing that semiconductor--nanocluster interfaces behave as laterally heterogeneous systems. In this picture, nanocluster-covered regions are associated with local band bending, charge injection, and nanocluster-induced gap states, whereas uncovered nitride regions retain surface-localized states and in-plane dipoles that may influence adsorbate interactions and water-activation pathways. These distinct regional responses motivate the definition of region-resolved interface descriptors, which are further integrated into an Interface Score: a physics-informed comparative metric that combines injection, activation, and interfacial-coupling contributions to rank heterogeneous model interfaces on a common descriptor basis. Machine-learning models trained on global and region-resolved descriptors are used primarily as interpretability tools to assess their correlation with single-H adsorption energetics. The results show that spatially averaged descriptors capture broad adsorption-energy trends, while region-resolved descriptors expose complementary local information related to interfacial electrostatics and charge separation. Together, this work establishes a descriptor framework for moving beyond spatially averaged electronic-structure analysis and for bridging first-principles calculations with experimental interpretation of heterogeneous photocatalytic interfaces.

cond-mat.mtrl-sci↗
arXiv2026

Electrically pumped AlGaN edge-emitting UV-B laser diodes grown by molecular beam epitaxy

Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we demonstrate an electrically pumped AlGaN-based laser diode operating in the UV-B band (280-315 nm). The device is grown by molecular beam epitaxy (MBE) on single-crystal AlN substrate and fabricated in a ridge-waveguide geometry. The laser diode operates at 298.5 nm and exhibits a relatively low threshold current density of 3.4 kA/cm$^2$. Clear nonlinear light-current characteristics and pronounced spectral narrowing with a full-width-at-half-maximum (FWHM) of 0.2 nm are measured above threshold.

physics.optics↗
arXiv2025

Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting

Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to either n type or p type, constraining their application to unipolar devices. The realization of pn junctions through heterogeneous integration of complementary UWBG or WBG semiconductors is hindered by lattice mismatch and thermal expansion differences. Here, we report the preliminary demonstration of diamond GaN heterojunction pn diodes fabricated via grafting. A single crystalline p plus diamond nanomembrane was integrated onto an epitaxially grown c plane n plus GaN substrate with an ultrathin ALD Al2O3 interlayer. The resulting diodes exhibit an ideality factor of 1.55 and a rectification ratio of over 1e4. Structural and interfacial properties were examined by AFM, XRD, Raman, and STEM, providing critical insights to guide further optimization of diamond GaN pn heterojunction devices.

cond-mat.mtrl-sci↗
arXiv2025

Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits

Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and complementary metal-oxide-semiconductor (CMOS) compatibility. However, the relatively high optical loss reported to date-typically above 2.4 dB/cm-remains a key challenge that limits its widespread application in low-loss PICs. Here, we present a monolithically integrated $\mathrm{Si}_3\mathrm{N}_4$-ScAlN waveguide platform that overcomes this limitation. By confining light within an etched $\mathrm{Si}_3\mathrm{N}_4$ waveguide while preserving the functional properties of the underlying ScAlN layer, we achieve an intrinsic quality factor of $Q_{\mathrm{i}} = 3.35 \times 10^5$, corresponding to a propagation loss of 1.03 dB/cm-comparable to that of commercial single-mode silicon-on-insulator (SOI) waveguides. This hybrid architecture enables low-loss and scalable fabrication while retaining the advanced functionalities offered by ScAlN, such as ferroelectricity and piezoelectricity. Our results establish a new pathway for ScAlN-based PICs with potential applications in high-speed optical communication, modulation, sensing, nonlinear optics, and quantum optics within CMOS-compatible platforms.

physics.optics↗
arXiv2025

Electronic structure and defect properties of Bi-doped GaN: origins of photoluminescence and optical absorption

Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniques. However, theoretical insights into defect-related optical absorption and emission phenomena in these materials remain scarce. Here, we apply hybrid density functional theory to systematically explore the role of substitutional bismuth atoms on both cationic $\mathrm{Bi_{Ga}}$ and anionic $\mathrm{Bi_{N}}$ sites in Bi-incorporated GaN, as well as their complexes with native vacancies. Our calculations reveal that the charge-compensated defect complexes $(\mathrm{Bi_{N}} + \mathrm{V_{Ga}})^{3-}$ and $(\mathrm{Bi_{N}} + \mathrm{V_{Ga}})^{3+}$ stabilize anionic bismuth incorporation, accounting for the experimentally observed absorption peaks at ~1.11 eV and ~3.17 eV. We further uncover the origins of the reported band-edge emissions near 2.0 eV and 2.5 eV by examining various charge states of $\mathrm{Bi_{Ga}}$ and $\mathrm{Bi_{N}}$ centers. Our findings elucidate the defect-level physics of Bi-doped GaN and provide practical guidelines for controlling the incorporation of Bi into GaN.

cond-mat.mtrl-sci↗
arXiv2025

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting

Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of heterojunction devices, in particular utilizing extreme lattice mismatches. We demonstrate the manipulation of device behaviors and performance enhancement achievable through a lattice-mismatched, single-crystalline GaAs/GeSn-multi-quantum well (MQW)/Ge n-i-p heterojunction by employing advanced semiconductor grafting technology. With engineered band alignment and optical field distribution, the grafted GaAs/GeSn-MQW/Ge n-i-p photodiode achieved outstanding performance: a record-low dark current density of 1.22E10^-7 A/cm^2, an extended spectral response from ~0.5 to 2 um, and improved photoresponsivity of RVIS of 0.85 A/W and RNIR of 0.40 A/W at 520 and 1570 nm, respectively. The dark current density is at least 5 orders of magnitude lower than state-of-the-art GeSn photodiodes. The photoresponsivity demonstrates an approximately sevenfold enhancement in the VIS range and a threefold improvement in the NIR range compared to the reference epitaxial photodiode. This work presents a unique strategy for constructing lattice-mismatched semiconductor heterojunction devices. More importantly, the implications transcend the current GaAs/GeSn-MQW/Ge example, offering potential applications in other material systems and freeing device design from the stringent lattice-matching constraints of conventional heteroepitaxy.

cond-mat.mtrl-sci↗
arXiv2024

Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing

The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses, critical to a broad range of acoustic, electronic, photonic, and quantum devices and applications. Experimentally, however, the measured piezoelectric responses of nitride semiconductors are far below what theory has predicted. Here, we show that the use of a simple, scalable, post-growth thermal annealing process can dramatically boost the piezoelectric response of ScAlN thin films. We achieve a remarkable 3.5-fold increase in the piezoelectric modulus, d33 for 30% Sc content ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN. The enhancement in piezoelectricity has been unambiguously confirmed by three separate measurement techniques. Such a dramatic enhancement of d33 has been shown to impact the effective electromechanical coupling coefficient kt2 : increasing it from 13.8% to 76.2%, which matches the highest reported values in millimeter thick lithium niobate films but is achieved in a 100 nm ScAlN with a 10,000 fold reduction in thickness, thus promising extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond 5G applications. By utilizing a range of material characterization techniques, we have elucidated the underlying mechanisms for the dramatically enhanced piezoelectric responses, including improved structural quality at the macroscopic scale, more homogeneous and ordered distribution of domain structures at the mesoscopic scale, and the reduction of lattice parameter ratio (c/a) for the wurtzite crystal structure at the atomic scale. Overall, the findings present a simple yet highly effective pathway that can be extended to other material families to further enhance their piezo responses.

cond-mat.mtrl-sci↗
arXiv2024

Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires

The pursuit of extreme device miniaturization and the exploration of novel physical phenomena have spurred significant interest in crystallographic phase control and ferroelectric switching in reduced dimensions. Recently, wurtzite ferroelectrics have emerged as a new class of functional materials, offering intriguing piezoelectric and ferroelectric properties, CMOS compatibility, and seamless integration with mainstream semiconductor technology. However, the exploration of crystallographic phase and ferroelectric switching in reduced dimensions, especially in nanostructures, has remained a largely uncharted territory. In this study, we present the first comprehensive investigation into the crystallographic phase transition of ScAlN nanowires across the full Sc compositional range. While a gradual transition from wurtzite to cubic phase was observed with increasing Sc composition, we further demonstrated that a highly ordered wurtzite phase ScAlN could be confined at the ScAlN/GaN interface for Sc contents surpassing what is possible in conventional films, holding great potential to addressing the fundamental high coercive field of wurtzite ferroelectrics. In addition, we provide the first evidence of ferroelectric switching in ScAlN nanowires, a result that holds significant implications for future device miniaturization. Our demonstration of tunable ferroelectric ScAlN nanowires opens new possibilities for nanoscale, domain, alloy, strain, and quantum engineering of wurtzite ferroelectrics, representing a significant stride towards the development of next-generation, miniaturized devices based on wurtzite ferroelectrics.

cond-mat.mtrl-sci↗
arXiv2024

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

physics.app-ph↗
arXiv2024

Selective incorporation of antimony into gallium nitride

Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions. However, the atomistic details of the incorporation of Sb into the GaN host remain unclear. In this work, we use first-principles calculations to understand the thermodynamics of Sb substitution into GaN, and its effect on the optical and Raman spectra. Although it is empirically considered that Sb is preferentially incorporated as an anion ($\mathrm{Sb^{3-}}$) into the N sublattice, we demonstrate that Sb can also be incorporated as a cation ($\mathrm{Sb^{3+}}$, $\mathrm{Sb^{5+}}$) into the metal sublattice. Our thermodynamic analysis demonstrates that $\mathrm{Sb_N^0}$, $\mathrm{Sb_{Ga}^{2+}}$, and $\mathrm{Sb_{Ga}^0}$ can co-exist under Ga-rich conditions in n-type samples. We further confirm the dual incorporation of Sb by calculating the vibrational frequencies of different anionic and cation substitutions to explain the origins of experimentally observed additional Raman peaks of Sb-doped GaN. Moreover, the calculated band structures of different Sb substitutions into GaN explain the experimental photoluminescence and optical absorption spectra. Overall, our analysis suggests that the coexistence of $\mathrm{Sb^{3-}}$, $\mathrm{Sb^{3+}}$, and $\mathrm{Sb^{5+}}$ substitutions into GaN explains the totality of experimental measurements. Our results demonstrate that the selective incorporation of Sb into GaN (and potentially other group-V elements such as As, P, or Bi) by tuning the growth conditions can drastically modify the electronic properties, for applications in visible light emitters and photocatalysis.

cond-mat.mtrl-sci↗
arXiv2024

Rethinking Polarization in Wurtzite Semiconductors

Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and functionality of gallium nitride (GaN)-the most produced semiconductor materials second only to silicon. However, recent direct experimental measurements unveiled remanent polarization of unexpectedly large magnitudes and opposite orientations to traditionally anticipated. This significant discrepancy not only poses a formidable challenge to our existing theoretical paradigms but also accentuates the need for a critical rethinking and methodological refinement to integrate these novel observations with established knowledge, mitigating potential misunderstandings and misconceptions in this rapidly evolving field.

cond-mat.mtrl-sci↗
arXiv2023

Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics

Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric characteristics and exploiting their functional properties in practical devices. Despite burgeoning interest, the exact configurations, and electronic structures of the domain walls in wurtzite ferroelectrics remain elusive. In this work, we elucidate the atomic configurations and electronic properties of electric-field-induced domain walls in ferroelectric ScGaN. By combining transmission electron microscopy and theoretical calculations, a novel charged domain wall with a buckled two-dimensional hexagonal phase is revealed. The dangling bonds associated with these domain walls give rise to unprecedented metallic-like mid-gap states within the forbidden band. Quantitative analysis further unveils a universal charge-compensation mechanism stabilizing antipolar domain walls in ferroelectric materials, wherein the polarization discontinuity at the 180{\deg} domain wall is compensated by the dangling bond electrons. Furthermore, the reconfigurable conductivity of these domain walls is experimentally demonstrated, showcasing their potential for ultra-scaled device applications. Our findings represent a pivotal advancement in understanding the structural and electronic properties of wurtzite ferroelectric domain walls and lay the groundwork for fundamental physics studies and device applications.

cond-mat.mtrl-sci↗
arXiv2023

Domain control and periodic poling of epitaxial ScAlN

ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced χ^{(2)} nonliearity. In this study, we demonstrate high-fidelity ferroelectric domain switching and periodic poling of Al-polar ScAlN thin film epitaxially grown on on c-axis sapphire substrate using gallium nitride as a buffer layer. Uniform poling of ScAlN with periods ranging from 2 um to 0.4 um is realized. The ability to lithographically control the polarization of epitaxial ScAlN presents a critical advance for its further exploitation in ferroelectric storage and nonlinear optics applications.

physics.app-ph↗
arXiv2023

Graph-Collaborated Auto-Encoder Hashing for Multi-view Binary Clustering

Unsupervised hashing methods have attracted widespread attention with the explosive growth of large-scale data, which can greatly reduce storage and computation by learning compact binary codes. Existing unsupervised hashing methods attempt to exploit the valuable information from samples, which fails to take the local geometric structure of unlabeled samples into consideration. Moreover, hashing based on auto-encoders aims to minimize the reconstruction loss between the input data and binary codes, which ignores the potential consistency and complementarity of multiple sources data. To address the above issues, we propose a hashing algorithm based on auto-encoders for multi-view binary clustering, which dynamically learns affinity graphs with low-rank constraints and adopts collaboratively learning between auto-encoders and affinity graphs to learn a unified binary code, called Graph-Collaborated Auto-Encoder Hashing for Multi-view Binary Clustering (GCAE). Specifically, we propose a multi-view affinity graphs learning model with low-rank constraint, which can mine the underlying geometric information from multi-view data. Then, we design an encoder-decoder paradigm to collaborate the multiple affinity graphs, which can learn a unified binary code effectively. Notably, we impose the decorrelation and code balance constraints on binary codes to reduce the quantization errors. Finally, we utilize an alternating iterative optimization scheme to obtain the multi-view clustering results. Extensive experimental results on $5$ public datasets are provided to reveal the effectiveness of the algorithm and its superior performance over other state-of-the-art alternatives.

cs.CV↗
arXiv2020

Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells

Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use cost-prohibitive substrates. Here we demonstrate a material system for intermediate band solar cells using InGaN/GaN quantum-dot-in-nanowire heterostructures grown directly on silicon to provide a lower cost, large-bandgap intermediate band solar cell platform. We demonstrate sequential two-photon current generation with sub-bandgap photons, the hallmark of intermediate band solar cell operation, through vertically stacked quantum dots in the nanowires. Near-infrared light biasing with an 850 nm laser intensity up to 200 W/cm2 increases the photocurrent above and below the bandgap by up to 19% at 78 K, and 44% at room temperature. The nanostructured III-nitride strategy provides a route towards realistic room temperature intermediate band solar cells while leveraging the cost benefits of silicon substrates.

physics.app-ph↗
arXiv2019

Jointly Adversarial Network to Wavelength Compensation and Dehazing of Underwater Images

Severe color casts, low contrast and blurriness of underwater images caused by light absorption and scattering result in a difficult task for exploring underwater environments. Different from most of previous underwater image enhancement methods that compute light attenuation along object-camera path through hazy image formation model, we propose a novel jointly wavelength compensation and dehazing network (JWCDN) that takes into account the wavelength attenuation along surface-object path and the scattering along object-camera path simultaneously. By embedding a simplified underwater formation model into generative adversarial network, we can jointly estimates the transmission map, wavelength attenuation and background light via different network modules, and uses the simplified underwater image formation model to recover degraded underwater images. Especially, a multi-scale densely connected encoder-decoder network is proposed to leverage features from multiple layers for estimating the transmission map. To further improve the recovered image, we use an edge preserving network module to enhance the detail of the recovered image. Moreover, to train the proposed network, we propose a novel underwater image synthesis method that generates underwater images with inherent optical properties of different water types. The synthesis method can simulate the color, contrast and blurriness appearance of real-world underwater environments simultaneously. Extensive experiments on synthetic and real-world underwater images demonstrate that the proposed method yields comparable or better results on both subjective and objective assessments, compared with several state-of-the-art methods.

eess.IV↗