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Zhenhua Qiao

Publications and source records attributed to Zhenhua Qiao.

At least 37 records · Page 2Linked to original sources

Fusion Rules of Majorana-Kramer-Pairs in Time-Reversal-Invariant Topological Superconductors

We theoretically investigate the fusion rules of Majorana Kramers pairs in time-reversal-invariant topological superconductors. We find that the fusion of Majorana Kramers pairs is a process that Ising anyons fuse independently in the two distinct time-reversal sectors. Considering the full fusion including the initialization and the fusion, we explore the observation of a supersymmetry that emerges in time-reversal-invariant topological superconductors, and design the schemes for the nontrivial fusion and the trivial fusion to show the non-Abelian statistics of Majorana Kramers pairs. We also show the possible influence of local adiabatic mixing on the fusion and the differentiation between distinct fusion processes remains feasible even in the presence of such mixing. Our proposals are applied in $d_{x^2-y^2}$-wave topological superconductors, and the theoretical framework can be extended to the fusion of multiple Majorana zero modes protected by unitary symmetry.

cond-mat.supr-con↗

Braiding Induced by Finite-Size Effect in One-Dimensional Topological Superconductors

We investigate the transport properties of Majorana zero mode (MZM) and Majorana Kramers pair (MKP) in one-dimensional topological superconductors, respectively. An effective model is established for braiding of MZMs and MKPs. We employ the $d_{x^{2}-y^{2}}$-wave topological superconductors to embody the effective model for braiding of MKPs by utilizing finite-size effects and locally tunable coupling parameters. We show how to construct the state initialization and readout via gate control. We also use this method for braiding MZMs in s-wave topological superconductors. Our proposal presents a promising avenue for experimentally verifying the non-Abelian statistical properties of MZMs and MKPs, with implications for topological quantum computing.

cond-mat.mes-hall↗

Flat bands and distinct density wave orders in correlated Kagome superconductor CsCr$_3$Sb$_5$

Kagome metal CsV$_3$Sb$_5$ has attracted much recent attention due to the coexistence of multiple exotic orders and the associated proposals to mimic unconventional high temperature superconductors. Nevertheless, magnetism and strong electronic correlations -- two essential ingredients for unconventional superconductivity, are absent in this V-based Kagome metal. CsCr$_3$Sb$_5$ is a newly discovered Cr-based parallel of CsV$_3$Sb$_5$, in which magnetism appears with charge density wave and superconductivity at different temperature and pressure regions. Enhanced electronic correlations are also suggested by theoretical proposals due to the calculated flat bands. Here, we report angle-resolved photoemission measurements and first-principles calculations on this new material system. Electron energy bands and the associated orbitals are resolved. Flat bands are observed near the Fermi level. Doping dependent measurements on Cs(Cr$_x$V$_{1-x}$)$_3$Sb$_5$ reveal a gradually enhanced band renormalization from CsV$_3$Sb$_5$ to CsCr$_3$Sb$_5$, accompanied by distinct spatial symmetry breaking states in the phase diagram.

cond-mat.supr-con↗

Engineering second-order topological insulators via coupling two first-order topological insulators

We theoretically investigate the engineering of two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators. We find that the interlayer coupling between two topological insulators with opposite topological invariants results in the formation of edge-state gaps, which are essential for the emergence of the corner states. Using the effective Hamiltonian framework, We elucidate that the formation of topological corner states requires either the preservation of symmetry in the crystal system or effective mass countersigns for neighboring edge states. Our proposed strategy for inducing corner state through interlayer coupling is versatile and applicable to both $\mathbb{Z}_2$ topological insulators and quantum anomalous Hall effects. We demonstrate this approach using several representative models including the seminal Kane-Mele model, the Bernevig-Hughes-Zhang model, and the Rashba graphene model to explicitly exhibit the formation of corner states via interlater coupling. Moreover, we also observe that the stacking of the coupled $\mathbb{Z}_2$ topological insulating systems results in the formation of the time-reversal invariant three-dimensional second-order nodal ring semimetals. Remarkably, the three-dimensional system from the stacking of the Bernevig-Hughes-Zhang model can be transformed into second-order Dirac semimetals, characterized by one-dimensional hinge Fermi arcs. Our strategy of engineering second-order topological phases via simple interlayer coupling promises to advance the exploration of higher-order topological insulators in two-dimensional spinful systems.

cond-mat.mes-hall↗

Interlayer Coupling Induced Topological Phase Transition to Higher Order

We theoretically find that the second-order topological insulator, i.e., corner states, can be engineered by coupling two copies of two-dimensional $\mathbb{Z}_2$ topological insulators with opposite spin-helicities. As concrete examples, we utilize Kane-Mele models (i.e., graphene with intrinsic spin-orbit coupling) to realize the corner states by setting the respective graphenes to be $\mathbb{Z}_2$ topological insulators with opposite intrinsic spin-orbit couplings. To exhibit its universality, we generalize our findings to other representative $\mathbb{Z}_2$ topological insulators, e.g., the Bernevig-Hughes-Zhang model. An effective model is presented to reveal the physical origin of corner states. We further show that the corner states can also be designed in other topological systems, e.g., by coupling quantum anomalous Hall systems with opposite Chern numbers. Our work suggests that interlayer coupling can be treated as a simple and efficient strategy to drive lower-order topological insulators to the higher-order ones.

cond-mat.mes-hall↗

Two-dimensional phase diagram of the charge density wave in doped CsV$_3$Sb$_5$

Kagome superconductors AV$_3$Sb$_5$ (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV$_3$Sb$_5$. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors.

cond-mat.supr-con↗

Linear displacement current solely driven by the quantum metric

Quantum metric and Berry curvature are the real part and imaginary part of the quantum geometric tensor, respectively. The T-odd (T: time-reversal) nonlinear Hall effect driven by the quantum metric dipole, recently confirmed in Science 381, 181 (2023) and Nature 621, 487 (2023), established the geometric duality to the T-even nonlinear Hall effect that driven by the Berry curvature dipole. Interestingly, a similar geometric duality between the quantum metric and the Berry curvature, particularly for the linear response of Bloch electrons, has not been established, although the T-odd linear intrinsic anomalous Hall effect (IAHE) solely driven by the Berry curvature has been known for a long time. Herein, we develop the quantum theory for displacement current under an AC electric field. Particularly, we show that the T-even component of the linear displacement current conductivity (LDCC) is solely determined by the quantum metric, by both the response theory and the semiclassical theory. Notably, with symmetry analysis we find that the T-even LDCC can contribute a Hall current in T-invariant systems but with low symmetry, while its longitudinal component is immune to symmetry. Furthermore, employing the Dirac Hamiltonian, we arrive at a $1/μ$ ($μ$: chemical potential) experimental observable enhancement of the displacement current owing to the divergent behavior of quantum metric near Dirac point, similar to the IAHE at Weyl point. Our work reveals the band geometric origin of the linear displacement current and establishes, together with the IAHE, the geometric duality for the linear response of Bloch electrons. Additionally, our work offers the very first intrinsic Hall effect in T-invariant materials, which can not be envisioned in DC transport in both linear and nonlinear regimes.

cond-mat.mes-hall↗

Tunning the number of chiral edge channels in a fixed quantum anomalous Hall system

Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C >1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This newfound tunability offers extra dimension for the implementation of the QAH-based multi-channel dissipationless transport.

cond-mat.mes-hall↗

Disorder-Induced Phase Transitions in Three-Dimensional Chiral Second-Order Topological Insulator

Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the phase transitions of three-dimensional (3D) chiral second-order topological insulator (SOTI) in the presence of disorders. Our results show that, by increasing disorder strength, the nonzero densities of states of side surface and bulk emerge at critical disorder strengths of $W_{S}$ and $W_{B}$, respectively. The spectral function indicates that the bulk gap is only closed at one of the $R_{4z}\mathcal{T}$-invariant points, i.e., $Γ_{3}$. The closing of side surface gap or bulk gap is ascribed to the significant decrease of the elastic mean free time of quasi-particles. Because of the localization of side surface states, we find that the 3D chiral SOTI is robust at an averaged quantized conductance of $2e^{2}/h$ with disorder strength up to $W_{B}$. When the disorder strength is beyond $W_{B}$, the 3D chiral SOTI is then successively driven into two phases, i.e., diffusive metallic phase and Anderson insulating phase. Furthermore, an averaged conductance plateau of $e^{2}/h$ emerges in the diffusive metallic phase.

cond-mat.mes-hall↗

A unique van Hove singularity in kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ with enhanced superconductivity

Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ (x~0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV$_3$Sb$_5$ (A=Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system.

cond-mat.supr-con↗

Berry-Curvature Engineering for Nonreciprocal Directional Dichroism in Two-Dimensional Antiferromagnets

In two-dimensional antiferromagnets, we identify the mixed Berry curvature as the geometrical origin of the nonreciprocal directional dichroism (NDD), which refers to the difference in light absorption with the propagation direction flipped. Such a Berry curvature is strongly tied to the uniaxial strain in accordance with the symmetry constraint, leading to a highly tunable NDD, whose sign and magnitude can be manipulated via the strain direction. As a concrete example, we demonstrate such a phenomenon in a lattice model of MnBi2Te4. The coupling between the mixed Berry curvature and strain also suggests the magnetic quadrupole of the Bloch wave packet as the macroscopic order parameter probed by the NDD in two dimensions, distinct from the multiferroic order P times M or the spin toroidal and quadrupole order within a unit cell in previous studies. Our work paves the way of the Berry-curvature engineering for optical nonreciprocity in two-dimensional antiferromagnets.

cond-mat.mes-hall↗

Sensing orbital hybridization of graphene-diamond interface with a single spin

Interfacial interactions are crucial in a variety of fields and can greatly affect the electric, magnetic, and chemical properties of materials. Among them, interface orbital hybridization plays a fundamental role in the properties of surface electrons such as dispersion, interaction, and ground states. Conventional measurements of electronic states at interfaces such as scanning tunneling microscopes are all based on electric interactions which, however, suffer from strong perturbation on these electrons. Here we unveil a new experimental detection of interface electrons based on the weak magnetic interactions between them and the nitrogen-vacancy (NV) center in diamond. With negligible perturbation on the interface electrons, their physical properties can be revealed by the NV spin coherence time. In our system, the interface interaction leads to significant decreases in both the density and coherence time of the electron spins at the diamond-graphene interface. Furthermore, together with electron spin resonance spectra and first-principle calculations, we can retrieve the effect of interface electron orbital hybridization. Our study opens a new pathway toward the microscopic probing of interfacial electronic states with weak magnetic interactions and provides a new avenue for future research on material interfaces.

quant-ph↗

Unidirectional electron-phonon coupling as a "fingerprint'' of the nematic state in a kagome superconductor

Electronic nematicity has been commonly observed in juxtaposition with unconventional superconductivity. Understanding the nature of the nematic state, as well as its consequence on the electronic band structure and superconductivity, has become a pivotal focus in condensed matter physics. Here we use spectroscopic imaging-scanning tunneling microscopy to visualize how the interacting quasiparticles organize themselves in the nematic state of kagome superconductor CsV$_{3-x}$Ti$_x$Sb$_5$, in which twofold symmetric (C$_2$) quasiparticle scattering interference of the vanadium kagome bands emerges below the bulk nematic transition temperature (T$_{nem}$). Surprisingly, we find that the coupling to collective modes, i.e., the phonon, dramatically alters the electrons self-energy and renormalizes the Fermi velocity of the in-plane vanadium d$_{xy/x^2-y^2}$ bands only along the C$_2$ direction, making the low-energy dispersion and electron dynamics highly nonequivalent along the three lattice directions. The anti-correlation between T$_{nem}$ and the superconducting transition temperature upon Ti substitution further suggests a possible competition between superconductivity and electron nematicity in this series, with a principal superconducting gap opening on the same V bands once the nematic state is totally suppressed. The organizing principle of these quasiparticles provides essential information for understanding the interplay between charge density wave and superconductivity in these kagome superconductors, and also reveals a previously unexplored form that expands the landscape for modelling electronic nematicity in systems where electron correlations and lattice degree of freedom act in concert.

cond-mat.supr-con↗

Optical Berry Curvature of Hinge State and Its Detection

We demonstrate that the topological hinge state can possess a nontrivial optical Berry curvature in the nonAbelian formulation of the Berry curvature. It can be readily probed by the circular photogalvanic effect (CPGE), with the light illuminating a specific hinge, and we refer to it as the hinge CPGE. As a concrete example, we calculate the hinge CPGE in ferromagnetic MnBi2nTe3n+1, and find that the hinge CPGE peak structure well reflects the optical Berry curvature of hinge states and the optical sum rule captures the optical Berry curvature between the hinge state and the ground state. Thus, the hinge CPGE provides a promising route towards the optical detection of the hinge state geometrical structure.

cond-mat.mes-hall↗

Interlayer ferromagnetism and insulator-metal transition in element-doped CrI3 thin films

The exploration of magnetism in two-dimensional layered materials has attracted extensive research interest. For the monoclinic phase CrI3 with interlayer antiferromagnetism, finding a static and robust way of realizing the intrinsic interlayer ferromagnetic coupling is desirable. In this Letter, we study the electronic structure and magnetic properties of the nonmagnetic element (e.g., O, S, Se, N, P, As and C) doped bi- and triple-layer CrI3 systems via first-principles calculations. Our results demonstrate that O, P, S, As, and Se doped CrI3 bilayer can realize interlayer ferromagnetism. Further analysis shows that the interlayer ferromagnetic coupling in the doped few-layer CrI3 is closely related to the formation of localized spin-polarized state. This finding indicates that insulated interlayer ferromagnetism can be realized at high doping concentration (larger than 8.33%). When the doping concentration is less than 8.33%, but larger than 2.08%, an insulator-metal phase transition can occur since the localized spin-polarized states percolate to form contiguous grids in few-layer CrI3.

cond-mat.mtrl-sci↗

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt$_{2}$AX$_{3}$ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt$_{2}$AX$_{3}$ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt$_{2}$HgS$_{3}$/NiBr$_{2}$, Pt$_{2}$HgSe$_{3}$/CoBr$_{2}$, Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$, and Pt$_{2}$ZnS$_{3}$/CoBr$_{2}$, with a maximum valley splitting of 134.2 meV in Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$ and sizable global band gap of 58.8 meV in Pt$_{2}$HgS$_{3}$/NiBr$_{2}$. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.

cond-mat.mes-hall↗

Layer Zero-Line Modes in Antiferromagnetic Topological Insulators

Recently, the magnetic domain walls have been experimentally observed in antiferromagnetic topological insulators MnBi$_2$Te$_4$, where we find that the topological zero-line modes (ZLMs) appear along the domain walls. Here, we theoretically demonstrate that these ZLMs are layer-dependent in MnBi$_2$Te$_4$ multilayers. For domain walls with out-of-plane ferromagnetism, we find that ZLMs are equally distributed in the odd-number layers. When domain walls possess in-plane magnetization, the ZLMs can also exist in even-number layers due to in-plane mirror-symmetry breaking. Moreover, the conductive channels are mainly distributed in the outermost layers with increasing layer thickness. Our findings lay out a strategy in manipulating ZLMs and also can be utilized to distinguish the corresponding magnetic structures.

cond-mat.mes-hall↗

Topological Corner States in Graphene by Bulk and Edge Engineering

Two-dimensional higher-order topology is usually studied in (nearly) particle-hole symmetric models, so that an edge gap can be opened within the bulk one. But more often deviates the edge anticrossing even into the bulk, where corner states are difficult to pinpoint. We address this problem in a graphene-based $\mathbb{Z}_2$ topological insulator with spin-orbit coupling and in-plane magnetization both originating from substrates through a Slater-Koster multi-orbital model. The gapless helical edge modes cross inside the bulk, where is also located the magnetization-induced edge gap. After demonstrating its second-order nontriviality in bulk topology by a series of evidence, we show that a difference in bulk-edge onsite energy can adiabatically tune the position of the crossing/anticrossing of the edge modes to be inside the bulk gap. This can help unambiguously identify two pairs of topological corner states with nonvanishing energy degeneracy for a rhombic flake. We further find that the obtuse-angle pair is more stable than the acute-angle one. These results not only suggest an accessible way to "find" topological corner states, but also provide a higher-order topological version of "bulk-boundary correspondence".

cond-mat.mes-hall↗