arXiv subjects

Zhenhua Qiao

Publications and source records attributed to Zhenhua Qiao.

At least 55 records · Page 3Linked to original sources

arXiv2022

Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating Magnetization Orientation

Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$, monolayer transitional metal oxides, can realize QAHE with tunable Chern numbers via manipulating their magnetization orientations. When the magnetization lies in the \textit{x-y} plane and all mirror symmetries are broken, the low-Chern-number (i.e., $\mathcal{C}=\pm1$) phase emerges. When the magnetization exhibits non-zero \textit{z}-direction component, the system enters the high-Chern-number (i.e., $\mathcal{C}=\pm3$) phase, even in the presence of canted magnetization. The global band gap can approach the room-temperature energy scale in monolayer PdSbO$_3$ (23.4 meV), when the magnetization is aligned to \textit{z}-direction. By using Wannier-based tight-binding model, we establish the phase diagram of magnetization induced topological phase transition. Our work provides a high-temperature QAHE system with tunable Chern number for the practical electronic application.

cond-mat.mes-hall↗

arXiv2022

Large Rashba Spin-Orbit Coupling and High-Temperature Quantum Anomalous Hall Effect in Re-Intercalated Graphene/CrI$_3$ Heterostructure

In 2010, quantum anomalous Hall effect (QAHE) in graphene was proposed in the presence of Rashba spin-orbit coupling and ferromagnetic exchange field. After a decade's experimental exploration, the anomalous Hall conductance can only reach about 0.25 in the units of $2e^2/h$, which was attributed to the tiny Rashba spin-orbit coupling. Here, we theoretically show that Re-intercalation in graphene/CrI$_3$ heterostructure can not only induce sizeable Rashba spin-orbit coupling ($>$ 40~meV), but also open up large band gaps at valleys $K$ (22.2 meV) and $K' $ (30.3 meV), and a global band gap over 5.5 meV (19.5 meV with random Re distribution) hosting QAHE. A low-energy continuum model is constructed to explain the underlying physical mechanism. We find that Rashba spin-orbit coupling is robust against external stress whereas a tensile strain can increase the global bulk gap. Furthermore, we also show that Re-intercalated graphene with hexagonal boron-nitride can also realize QAHE with bulk gap over 40~meV, indicating the tunability of $5d$-intercalated graphene-based heterostructure. Our finding makes a great leap towards the experimental realization of graphene-based QAHE, and will definitely accelerate the practical application of graphene-based low-power electronics.

cond-mat.mes-hall↗

arXiv2022

Pressure-induced dimensional crossover in a kagome superconductor

The recently discovered kagome superconductors AV3Sb5 exhibit tantalizing high-pressure phase diagrams, in which a new dome-like superconducting phase emerges under moderate pressure. However, its origin is as yet unknown. Here, we carried out the high-pressure electrical measurements up to 150 GPa, together with the high-pressure X-ray diffraction measurements and first-principles calculations on CsV3Sb5. We find the new superconducting phase to be rather robust and inherently linked to the interlayer Sb2-Sb2 interactions. The formation of Sb2-Sb2 bonds at high pressure tunes the system from two-dimensional to three-dimensional and pushes the Pz orbital of Sb2 upward across the Fermi level, resulting in enhanced density of states and increase of TC. Our work demonstrates that the dimensional crossover at high pressure can induce a topological phase transition and is related to the abnormal high-pressure TC evolution. Our findings should apply for other layered materials.

cond-mat.supr-con↗

arXiv2022

Realization of Kane-Mele Model in $\pmb X\bf{N_4}$-Embedded Graphene ($\pmb X$=Pt, Ir, Rh, Os)

Monolayer graphene embedded with transition metal nitride (i.e., $X$N$_4$) has been experimentally synthesized recently, where a transition metal atom together with four nitrogen atoms as a unit are embedded in graphene to form a stable planar single-atom-thick structure. We provide a systematic study on the structural, electronic and topological properties of these $X$N$_4$-embedded graphene by utilizing both first-principles calculations and tight-binding model. We find that $X$N$_4$-embedded graphene ($X$=Pt, Ir, Rh, Os) can open topologically nontrivial band gaps that host \emph{two-dimensional} $\mathbb{Z}_2$ topological insulators. We further show that the low-energy bands near the band gaps can be perfectly captured by a modified Kane-Mele model Hamiltonian. Our work not only provides concrete two-dimensional materials that are very rare to realize \emph{two-dimensional} $\mathbb{Z}_2$ topological insulators, but also makes the graphene system to be realistic in hosting Kane-Mele type $\mathbb{Z}_2$ topological insulators.

cond-mat.mtrl-sci↗

arXiv2022

Second-Order Topological Insulator in van der Waals Heterostructures of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$

Second-order topological insulator, which has (d-2)-dimensional topological hinge or corner states, has been observed in three-dimensional materials, but has yet not been observed in two-dimensional system. In this Letter, we theoretically propose the realization of second-order topological insulator in the van der Waals heterostructure of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$. Pt$_2$HgSe$_3$ is a large gap $\mathbb{Z}_2$ topological insulator. With in-plane exchange field from neighboring CoBr$_2$, a large band gap above 70 meV opens up at the edge. The corner states, which are robust against edge disorders and irregular shapes, are confirmed in the nanoflake. We further show that the second-order topological states can also be realized in the heterostructure of jacutingaite family $\mathbb{Z}_2$ topological insulators. We believe that our work will be beneficial for the experimental realization of second-order topological insulators in van der Waals layered materials.

cond-mat.mes-hall↗

arXiv2021

Realizing Kagome Band Structure in Two-Dimensional Kagome Surface States of $RV_{6}Sn_{6}$ ($R$=Gd,Ho)

We report angle resolved photoemission experiments on a newly discovered family of kagome metals $RV_{6}Sn_{6}$ ($R$=Gd, Ho). Intrinsic bulk states and surface states of the vanadium kagome layer are differentiated from those of other atomic sublattices by the real-space resolution of the measurements with a small beam spot. Characteristic Dirac cone, saddle point and flat bands of the kagome lattice are observed. Our results establish the two-dimensional (2D) kagome surface states as a new platform to investigate the intrinsic kagome physics.

cond-mat.mtrl-sci↗

arXiv2021

Large-Gap Quantum Anomalous Hall Effect in Monolayer Halide Perovskite

We theoretically propose a family of structurally stable monolayer halide perovskite A$_3$B$_2$C$_9$ (A=Rb, Cs; B=Pd, Pt; C=Cl, Br) with easy magnetization planes. These materials are all half-metals with large spin gaps over 1~eV accompanying with a single spin Dirac point located at K point. When the spin-orbit coupling is switched on, we further show that Rb$_3$Pt$_2$Cl$_9$, Cs$_3$Pd$_2$Cl$_9$, and Cs$_3$Pt$_2$Cl$_9$ monolayers can open up large band gaps from 63 to 103 meV to harbor quantum anomalous Hall effect with Chern numbers of $\mathcal{C}=\pm1$, whenever the mirror symmetry is broken by the in-plane magnetization. The corresponding Berezinskii-Kosterlitz-Thouless transition temperatures are over 248~K. Our findings provide a potentially realizable platform to explore quantum anomalous Hall effect and spintronics at high temperatures.

cond-mat.mes-hall↗

arXiv2021

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable dissipationless chiral edge conduction at zero magnetic field, effective exchange field arisen from the aligned magnetic dopants needs to be large enough to yield specific spin sub-band configurations. Here we report the thickness-tailored quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)2Te3 thin films by tuning the system across the two-dimensional (2D) limit. In addition to the Chern number-related metal-to-insulator QAH phase transition, we also demonstrate that the induced hybridization gap plays an indispensable role in determining the ground magnetic state of the MTIs, namely the spontaneous magnetization owning to considerable Van Vleck spin susceptibility guarantees the zero-field QAH state with unitary scaling law in thick samples, while the quantization of the Hall conductance can only be achieved with the assistance of external magnetic fields in ultra-thin films. The modulation of topology and magnetism through structural engineering may provide a useful guidance for the pursuit of QAH-based new phase diagrams and functionalities.

cond-mat.mes-hall↗

arXiv2021

Physical Origin of Current Partition at a Topological Trifurcation

In gated bilayer graphene, topological zero-line modes (ZLMs) appear along lines separating regions with opposite valley Hall topologies. Although it is experimentally difficult to design the electric gates to realize ZLMs due to the extremely challenging techniques, twisted bilayer graphene provides a natural platform to produce ZLMs in the presence of uniform electric field. In this Letter, we develop a set of wavepacket dynamics, which can be utilized to characterize various gapless edge modes and can quantitatively reproduce the electronic transport properties at topological intersections. To our surprise, in the minimally twisted bilayer graphene where a topological trifurcation intersection naturally arises, we show that the counterintuitive current partition (i.e., the direct transport propagation) originates from the microscopic mechanism "bypass jump". Our method can be applied to understand the microscopic pictures of the electronic transport features of all kinds of topological states.

cond-mat.mes-hall↗

arXiv2021

A class of fractional p()-Kirchhoff type systems

This paper is concerned with an elliptic system of Kirchhoff type, driven by the variable-order fractional $p(x)$-operator. With the help of the direct variational method and Ekeland variational principle, we show the existence of a weak solution. This is our first attempt to study this kind of system, in the case of variable-order fractional variable exponents. Our main theorem extends in several directions previous results.

math.AP↗

arXiv2021

Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi$_2$Te$_4$ Multilayers

The interlayer antiferromagnetic coupling hinders the observation of quantum anomalous Hall effect in magnetic topological insulator MnBi$_2$Te$_4$. We demonstrate that interlayer \textit{ferromagnetism} can be established by utilizing the \textit{p}-doping method in MnBi$_2$Te$_4$ multilayers. In two septuple-layers system, the interlayer ferromagnetic coupling appears by doping nonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to the redistribution of orbital occupations of Mn. We further find that Mg and Ca elements are the most suitable candidates because of their low formation energy. Although, the \textit{p}-doped two septuple layers exhibit topologically trivial band structure, the increase of layer thickness to three (four) septuple layers with Ca (Mg) dopants leads to the formation of the quantum anomalous Hall effect. Our proposed \textit{p}-doping strategy not only makes MnBi$_2$Te$_4$ become an ideal platform to realize the high-temperature quantum anomalous Hall effect without external magnetic field, but also can compensate the electrons from the intrinsic \textit{n}-type defects in MnBi$_2$Te$_4$.

cond-mat.mtrl-sci↗

arXiv2020

Van der Waals Heterostructure Pt$_{2}$HgSe$_{3}$/CrI$_3$ for Topological Valleytronics

We identify a valley-polarized Chern insulator in the van der Waals heterostructure, Pt$_{2}$HgSe$_{3}$/CrI$_3$, for potential applications with interplay between electric, magnetic, optical, and mechanical effects. The interlayer proximity magnetic coupling nearly closes the band gap of Pt$_{2}$HgSe$_{3}$ and the strong intra-layer spin-orbit coupling further lifts the valley degeneracy by over 100 meV leading to positive and negative band gaps at opposite valleys. In the valley with negative gap, the interfacial Rashba spin-orbit coupling opens a topological band gap of 17.8 meV, which is enlarged to 30.8 meV by adding an $h$-BN layer. We find large orbital magnetization in Pt$_{2}$HgSe$_{3}$ layer that is much larger than spin, which can induce measurable optical Kerr effect. The valley polarization and Chern number are coupled to the magnetic order of the nearest neighboring CrI$_3$ layer, which is switchable by electric, magnetic, and mechanical means in experiments. The presence of $h$-BN protects the topological phase allowing the construction of superlattices with valley, spin, and layer degrees of freedoms.

cond-mat.mtrl-sci↗

arXiv2020

Quantum Phases of Kagome Electron System with Half-Filled Flat Bands

We study the quantum phase diagram of spinful fermions on kagome lattice with half-filled lowest flat bands. To understand the competition between magnetism, flat band frustration, and repulsive interactions, we adopt an extended $t$-$J$ model, where the hopping energy $t$, antiferromagnetic Heisenberg interaction $J$, and short-range neighboring Hubbard interaction $V$ are considered. In the weak $J$ regime, we identify a fully spin-polarized phase, which can further support the spontaneous Chern insulating phase driven by the short-range repulsive interaction. This phase still emerges with in-plane ferromagnetism, whereas the non-interacting Chern insulator disappears constrained by symmetry. As $J$ gradually increases, the ferromagnetism is suppressed and the system first becomes partially-polarized with large magnetization and then enters a non-polarized phase with the ground state exhibiting vanishing magnetization. We identify this non-polarized phase as an insulator with a nematic charge density wave. In the end, we discuss the potential experimental observations of our theoretical findings.

cond-mat.str-el↗

arXiv2020

Berry-Curvature Exchange Induced Anderson Localization in Large-Chern-Number Quantum Anomalous Hall Effect

We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $\mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $\mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${\mathcal{C}}={\mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${\mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.

cond-mat.mes-hall↗

arXiv2020

Valley-Current Splitter in Minimally Twisted Bilayer Graphene

We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.

cond-mat.mes-hall↗

arXiv2020

Metallic Network of Topological Domain Walls

We study the electronic and transport properties of a network of domain walls between insulating domains with opposite valley Chern numbers. We find that the network is semi-metallic with Dirac dispersion near the charge neutrality point and the corresponding electronic states distribute along the domain walls. Near the charge neutrality point, we find quantized conductance in nanoribbon with sawtooth domain wall edges that propagates along the boundaries and is robust against weak disorder. For a trident edged ribbon, we find a small energy gap due to the finite size effect making the nanoribbon an insulator. When the Fermi energy is away from charge neutrality point, all domain walls contribute to the conduction of current. Our results provide a comprehensive analysis of the electronic transport properties in a topological domain wall network that not only agrees qualitatively with experiments on marginally twisted bilayer graphene under a perpendicular electric field, but also can provide useful insights for designing low-power topological quantum devices.

cond-mat.mes-hall↗

arXiv2020

Engineering Corner States from Two-Dimensional Topological Insulators

We theoretically demonstrate that the second-order topological insulator with robust corner states can be realized in two-dimensional $\mathbb{Z}_2$ topological insulators by applying an in-plane Zeeman field. Zeeman field breaks the time-reversal symmetry and thus destroys the $\mathbb{Z}_2$ topological phase. Nevertheless, it respects some crystalline symmetries and thus can protect the higher-order topological phase. By taking the Kane-Mele model as a concrete example, we find that spin-helical edge states along zigzag boundaries are gapped out by Zeeman field whereas in-gap corner state at the intersection between two zigzag edges arises, which is independent on the field orientation. We further show that the corner states are robust against the out-of-plane Zeeman field, staggered sublattice potentials, Rashba spin-orbit coupling, and the buckling of honeycomb lattices, making them experimentally feasible. Similar behaviors can also be found in the well-known Bernevig-Hughes-Zhang model.

cond-mat.mes-hall↗

arXiv2020

Approaching Three-Dimensional Quantum Hall effect in Bulk HfTe5

The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems1,2. By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau level spacing, quasi-2D quantum Hall effects have been experimentally observed3~7, due to the similar physical origin of the 2D counterpart. Recently, in a real 3D electronic gas system where the interlayer coupling is much stronger than the Landau level spacing, 3D quantum Hall effect has been observed in ZrTe58. In this Letter, we report the electronic transport features of its sister bulk material, i.e., HfTe5, under external magnetic field. We observe a series of plateaus in Hall resistance \r{ho}xy as magnetic field increases until it reaches the quantum limit at 1~2 Tesla. At the plateau regions, the longitudinal resistance \r{ho}xx exhibits local minima. Although \r{ho}xx is still nonzero, its value becomes much smaller than \r{ho}xy at the last few plateaus. By mapping the Fermi surface via measuring the Shubonikov-de Haas oscillation, we find that the strength of Hall plateau is proportional to the Fermi wavelength, suggesting that its formation may be attributed to the gap opening from the interaction driven Fermi surface instability. By comparing the bulk band structures of ZrTe5 and HfTe5, we find that there exists an extra pocket near the Fermi level of HfTe5, which may lead to the finite but nonzero longitudinal conductance.

cond-mat.mtrl-sci↗