arXiv subjects

Zhenhua Qiao

Publications and source records attributed to Zhenhua Qiao.

At least 91 records · Page 5Linked to original sources

arXiv2016

Spin-Pairing Correlations and Spin Polarization of Majorana Bound States in Two-Dimensional Topological Insulator Systems

We demonstrate that zero-energy Majorana bound state, in the ferromagnetic insulator (FI)-superconductor (SC) junction formed on the edge of two-dimensional topological insulator, exhibits three types of spin-triplet pairing correlations and its spin polarization direction is position independent in ferromagnetic insulator. When an electron is injected with a spin (anti-)parallel to this direction, equal-spin Andreev reflection exhibits the widest (narrowest) resonance peak. Similar behaviour is found when the coupling between two Majorana bound states in a FI-SC-FI junction is invoked, though an additional weak spin-singlet pairing correlation is generated. These signatures can readily facilitate the experimental detection of spin-triplet correlations and spin polarization of Majorana bound states.

cond-mat.mes-hall↗

arXiv2016

Topological phase transition from trigonal warping in van der Waals multilayers

In van der Waals multilayers of triangular lattice, trigonal warping occurs universally due to the interlayer hopping. We theoretically investigate the effect of trigonal warping upon distinctive topological phases, like the quantum anomalous Hall effect (QAHE) and the quantum valley Hall effect (QVHE). Taking Bernal-stacked bilayer graphene as an example, we find that the trigonal warping plays a crucial role in the formation of QAHE in large exchange field and/or interlayer potential difference by inducing extra band inversion points at momentum further away from high symmetric point. The presence of trigonal warping shrinks the phase space of QAHE and QVHE, leading to the emergence of valley-polarized QAHE with high Chern numbers ranging from $ \mathcal{C}=-7 $ to $ 7 $. These results suggest that the universal trigonal warping may play important role when the Bloch states at momentum away from high-symmetric points are involved.

cond-mat.mes-hall↗

arXiv2016

Anderson Localization from Berry-Curvature Interchange in Quantum Anomalous Hall System

We theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE keeps quantized at weak disorders, then enters a Berry-curvature mediated metallic phase at moderate disorders, and finally goes into the Anderson insulating phase at strong disorders. From the phase diagram, we find that at the charge neutrality point although the QAHE is most robust against disorders, the corresponding metallic phase is much easier to be localized into the Anderson insulating phase due to the \textit{interchange} of Berry curvatures carried respectively by the conduction and valence bands. At the end, we provide a phenomenological picture related to the topological charges to better understand the underlying physical origin of the QAHE Anderson localization.

cond-mat.mes-hall↗

arXiv2015

High-Efficiency Cooper-Pair Splitter in Quantum Anomalous Hall Insulator Proximity-Coupled with Superconductor

The quantum entanglement between two qubits is crucial for applications in the quantum communication. After the entanglement of photons was experimentally realized, much effort has been taken to exploit the entangled electrons in solid-state systems. Here, we propose a Cooper-pair splitter, which can generate spatially-separated but entangled electrons, in a quantum anomalous Hall insulator proximity-coupled with a superconductor. After coupling with a superconductor, the chiral edge states of the quantum anomalous Hall insulator can still survive, making the backscattering impossible. Thus, the local Andreev reflection becomes vanishing, while the crossed Andreev reflection becomes dominant in the scattering process. This indicates that our device can serve as an extremely high-efficiency Cooper-pair splitter. Furthermore, because of the chiral characteristic, our Cooper-pair splitter is robust against disorders and can work in a wide range of system parameters. Particularly, it can still function even if the system length exceeds the superconducting coherence length.

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arXiv2015

Topological Phases in Two-Dimensional Materials: A Brief Review

Topological phases with insulating bulk and gapless surface or edge modes have attracted much attention because of their fundamental physics implications and potential applications in dissipationless electronics and spintronics. In this review, we mainly focus on the recent progress in the engineering of topologically nontrivial phases (such as $\mathbb{Z}_2$ topological insulators, quantum anomalous Hall effects, quantum valley Hall effects \textit{etc.}) in two-dimensional material systems, including quantum wells, atomic crystal layers of elements from group III to group VII, and the transition metal compounds.

cond-mat.mtrl-sci↗

arXiv2015

The role of geometry and topological defects in the 1D zero-line modes of graphene

Breaking inversion symmetry in chiral graphene systems, \textit{e.g.}, by applying a perpendicular electric field in chirally-stacked rhombohedral multilayer graphene or by introducing staggered sublattice potentials in monolayer graphene, opens up a bulk band gap that harbors a quantum valley-Hall state. When the gap size is allowed to vary and changes sign in space, a topologically-confined one-dimensional (1D) zero-line mode (ZLM) is formed along the zero lines of the local gap. Here we show that gapless ZLM with distinguishable valley degrees of freedom K and K$'$ exist for every propagation angle except for the armchair direction that exactly superpose the valleys. We further analyze the role of different geometries of top-bottom gated device setups that can be realized in experiments, discuss the effects of their edge misalignment, and analyze three common forms of topological defects that could influence the 1D ZLM transport properties in actual devices.

cond-mat.mes-hall↗

arXiv2015

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

cond-mat.mes-hall↗

arXiv2015

High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators

The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and promises to have immense application potentials in future dissipation-less quantum electronics. Here we present a novel kinetic pathway to realize the QAHE at high temperatures by $n$-$p$ codoping of three-dimensional topological insulators. We provide proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped Sb$_2$Te$_3$ and demonstrate that, strikingly, even at low concentrations of $\sim$2\% V and $\sim$1\% I, the system exhibits a quantized Hall conductance, the tell-tale hallmark of QAHE, at temperatures of at least $\sim$ 50 Kelvin, which is three orders of magnitude higher than the typical temperatures at which it has been realized so far. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.

cond-mat.mtrl-sci↗

arXiv2015

Single-Valley Engineering in Graphene Superlattices

The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator phases. Here we propose a way to engineer a chiral single-valley metallic phase with quadratic crossover in a honeycomb lattice through tailored \sqrt{3}N *\sqrt{3}N or 3N *3N superlattices. The possibility of tuning valley-polarization via pseudo-Zeeman field and the emergence of Dresselhaus-type valley-orbit coupling are proposed in adatom decorated graphene superlattices. Such valley manipulation mechanisms and metallic phase can also find applications in honeycomb photonic crystals.

cond-mat.mtrl-sci↗

arXiv2015

Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator

We propose realizing the quantum anomalous Hall effect by proximity coupling graphene to an antiferromagnetic insulator that provides both broken time-reversal symmetry and spin-orbit coupling. We illustrate our idea by performing ab initio calculations for graphene adsorbed on the (111) surface of BiFeO3. In this case, we find that the proximity-induced exchange field in graphene is about 70 meV, and that a topologically nontrivial band gap is opened by Rashba spin-orbit coupling. The size of the gap depends on the separation between the graphene and the thin film substrate, which can be tuned experimentally by applying external pressure.

cond-mat.mes-hall↗

arXiv2014

Topological metallic states in spin-orbit coupled bilayer systems

We investigate the influence of different spin-orbit couplings on topological phase transitions in the bilayer Kane-Mele model. We find that the competition between intrinsic spin-orbit coupling and Rashba spin-orbit coupling can lead to two dimensional topological metallic states with nontrivial topology. Such phases, although having a metallic bulk, still possess edge states with well-defined topological invariants. Specifically, we show that with preserved time reversal symmetry, the system can exhibit a $\mathbb{Z}_2$-metallic phase with spin helical edge states and a nontrivial $\mathbb{Z}_2$ invariant. When time reversal symmetry is broken, a Chern metallic phase could appear with chiral edge states and a nontrivial Chern invariant.

cond-mat.mes-hall↗

arXiv2013

Ab-Initio Theory of Moiré Superlattice Bands in Layered Two-Dimensional Materials

When atomically thin two-dimensional (2D) materials are layered they often form incommensurate non-crystalline structures that exhibit long-period moir{\' e} patterns when examined by scanning probes. In this paper we present an approach which uses information obtained from {\it ab initio} calculations performed on short-period crystalline structures to derive effective Hamiltonians that are able to efficiently describe the influence of the moir{\' e} pattern superlattices on electronic properties. We apply our approach to the cases of graphene on graphene (G/G) and graphene on hexagonal boron nitride (G/BN), deriving explicit effective Hamiltonians that have the periodicity of the moir{\' e} pattern and can be used to calculate electronic properties of interest for arbitrary twist angles and lattice constants.

cond-mat.mes-hall↗

arXiv2013

Valley-Polarized Quantum Anomalous-Hall Effects in Silicene

We demonstrate a new quantum state of matter---valley-polarized quantum anomalous Hall effect in monolayer silicene. In the presence of extrinsic Rashba spin-orbit coupling and exchange field, monolayer silicene can host a quantum anomalous-Hall state with Chern number C=2. We find that through tuning Rashba spin-orbit coupling, a topological phase transition gives rise to a valley polarized quantum anomalous Hall state, i.e. a quantum state which exhibits electronic properties of both quantum valley-Hall effect (valley Chern number C_V=3) and quantum anomalous Hall effect with C=-1.

cond-mat.mes-hall↗

arXiv2013

Current partition at topological zero-line intersections

An intersection between one-dimensional chiral acts as a topological current splitter. We find that the splitting of a chiral zero-line mode obeys very simple, yet highly counterintuitive, partition laws which relate current paths to the geometry of the intersection. Our results have far reaching implications for device proposals based on chiral zero-line transport in the design of electron beam splitters and interferometers, and for understanding transport properties in systems where multiple topological domains lead to a statistical network of chiral channels.

cond-mat.mes-hall↗

arXiv2012

Topological phases in gated bilayer graphene: Effects of Rashba spin-orbit coupling and exchange field

We present a systematic study on the influence of Rashba spin-orbit coupling, interlayer potential difference and exchange field on the topological properties of bilayer graphene. In the presence of only Rashba spin-orbit coupling and interlayer potential difference, the band gap opening due to broken out-of-plane inversion symmetry offers new possibilities of realizing tunable topological phase transitions by varying an external gate voltage. We find a two-dimensional $Z_2$ topological insulator phase and a quantum valley Hall phase in $AB$-stacked bilayer graphene and obtain their effective low-energy Hamiltonians near the Dirac points. For $AA$ stacking, we do not find any topological insulator phase in the presence of large Rashba spin-orbit coupling. When the exchange field is also turned on, the bilayer system exhibits a rich variety of topological phases including a quantum anomalous Hall phase, and we obtain the phase diagram as a function of the Rashba spin-orbit coupling, interlayer potential difference, and exchange field.

cond-mat.mes-hall↗

arXiv2012

Unbalanced edge modes and topological phase transition in gated trilayer graphene

Gapless edge modes hosted by chirally-stacked trilayer graphene display unique features when a bulk gap is opened by applying an interlayer potential difference. We show that trilayer graphene with half-integer valley Hall conductivity leads to unbalanced edge modes at opposite zigzag boundaries, resulting in a natural valley current polarizer. This unusual characteristic is preserved in the presence of Rashba spin-orbit coupling that turns a gated trilayer graphene into a ${Z}_2$ topological insulator with an odd number of helical edge mode pairs.

cond-mat.mes-hall↗

arXiv2012

Transport Properties of Graphene Nanoroads in Boron-Nitride Sheets

We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron-nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab-initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley-Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position dependent masses.

cond-mat.mes-hall↗

arXiv2012

Stabilizing topological phases in graphene via random adsorption

We study the possibility of realizing topological phases in graphene with randomly distributed adsorbates. When graphene is subjected to periodically distributed adatoms, the enhanced spin-orbit couplings can result in various topological phases. However, at certain adatom coverages, the intervalley scattering renders the system a trivial insulator. By employing a finite-size scaling approach and Landauer-Büttiker formula, we show that the randomization of adatom distribution greatly weakens the intervalley scattering, but plays a negligible role in spin-orbit couplings. Consequently, such a randomization turns graphene from a trivial insulator into a topological state.

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