arXiv subjects

Zhenhua Qiao

Publications and source records attributed to Zhenhua Qiao.

At least 73 records · Page 4Linked to original sources

arXiv2019

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at $T_{\rm C}=42~\rm K$ when a five-quintuple-layer Sb$_2$Te$_3$ topological insulator is inserted into two septuple-layer MnBi$_2$Te$_4$ with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that MnBi$_2$Te$_4$/Sb$_2$Te$_3$/MnBi$_2$Te$_4$ heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of $\mathcal{C}=1$. In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge-compensation, originating from the intrinsic n-type defects in MnBi$_2$Te$_4$ and p-type defects in Sb$_2$Te$_3$.

cond-mat.mtrl-sci↗

arXiv2019

Mesoscopic Electronic Transport in Twisted Bilayer Graphene

We numerically investigate the electronic transport properties between two mesoscopic graphene disks with a twist by employing the density functional theory coupled with non-equilibrium Green's function technique. By attaching two graphene leads to upper and lower graphene layers separately, we explore systematically the dependence of electronic transport on the twist angle, Fermi energy, system size, layer stacking order and twist axis. When choose different twist axes for either AA- or AB-stacked bilayer graphene, we find that the dependence of conductance on twist angle displays qualitatively distinction, i.e., the systems with "top" axis exhibit finite conductance oscillating as a function of the twist angle, while the ones with "hollow" axis exhibit nearly vanishing conductance for different twist angles or Fermi energies near the charge neutrality point. These findings suggest that the choice of twist axis can effectively tune the interlayer conductance, making it a crucial factor in designing of nanodevices with the twisted van der Waals multilayers.

cond-mat.mes-hall↗

arXiv2019

Finite-Size Effects in the Dynamic Conductivity and Faraday Effect of Quantum Anomalous Hall Insulators

We theoretically study the finite-size effects in the dynamical response of a quantum anomalous Hall insulator in the disk geometry. Semi-analytic and numerical results are obtained for the wavefunctions and energies of the disk within a continuum Dirac Hamiltonian description subject to a topological infinite mass boundary condition. Using the Kubo formula, we obtain the frequency-dependent longitudinal and Hall conductivities and find that optical transitions between edge states contribute dominantly to the real part of the dynamic Hall conductivity for frequency values both within and beyond the bulk band gap. We also find that the topological infinite mass boundary condition changes the low-frequency Hall conductivity to $ e^2/h $ in a finite-size system from the well-known value $ e^2/2h $ in an extended system. The magneto-optical Faraday rotation is then studied as a function of frequency for the setup of a quantum anomalous Hall insulator mounted on a dielectric substrate, showing both finite-size effects of the disk and Fabry-Pérot resonances due to the substrate. Our work demonstrates the important role played by the boundary condition in the topological properties of finite-size systems through its effects on the electronic wavefunctions.

cond-mat.mes-hall↗

arXiv2019

Quantum Anomalous Hall Effect by Coupling Heavy Atomic Layers with CrI$_{3}$

We explored the possibility of realizing quantum anomalous Hall effect by placing heavy-element atomic layer on top of monolayer CrI$_{3}$ with a natural cleavage surface and broken time-reversal symmetry. We showed that CrI$_{3}$/X (X = Bi, Sb, or As) systems can open up a sizable bulk gap to harbour quantum anomalous Hall effect, e.g., CrI$_{3}$/Bi is a natural magnetic insulator with a bulk gap of 30~meV, which can be further enlarged via strain engineering or adjusting spin orientations. We also found that the ferromagnetic properties (magnetic anisotropic energy and Curie temperature) of pristine CrI$_{3}$ can be further improved due to the presence of heavy atomic layers, and the spin orientation can be utilized as a useful knob to tune the band structure and Fermi level of CrI$_{3}$/Bi system. The topological nature, together with the enhanced ferromagnetism, can unlock new potential applications for CrI$_{3}$-based materials in spintronics and electronics.

cond-mat.mtrl-sci↗

arXiv2019

Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators

Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3$ exhibits long-range ferromagnetism and preserve large bulk band gap. We further show that its corresponding thin-film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than the typical temperatures in similar systems. Our proposed \textit{nonmagnetic} doping scheme may shed new light in experimental realization of high-temperature QAHE in topological insulators.

cond-mat.mtrl-sci↗

arXiv2019

Pressure-Induced Modification of Anomalous Hall Effect in Layered Fe$_3$GeTe$_2$

We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe$_3$GeTe$_2$. Its crystal sustains a hexagonal phase under high pressures up to 25.9 GPa, while the Curie temperature decreases monotonously with the increasing pressure. By applying appropriate pressures, the experimentally measured anomalous Hall conductivity, $σ_{xy}^A$, can be efficiently controlled. Our theoretical study reveals that this finding can be attributed to the shift of the spin--orbit-coupling-induced splitting bands of Fe atoms. With loading compression, $σ_{xy}^A$ reaches its maximal value when the Fermi level lies inside the splitting bands and then attenuates when the splitting bands float above the Fermi level. Further compression leads to a prominent suppression of the magnetic moment, which is another physical cause of the decrease in $σ_{xy}^A$ at high pressure. These results indicate that the application of pressure is an effective approach in controlling the anomalous Hall conductivity of layered magnetic materials, which elucidates the physical mechanism of the large intrinsic anomalous Hall effect.

cond-mat.mtrl-sci↗

arXiv2018

Three-dimensional quantum Hall effect and metal-insulator transition in ZrTe5

Symmetry, dimensionality, and interaction are crucial ingredients for phase transitions and quantum states of matter. As a prominent example, the integer quantum Hall effect (QHE) represents a topological phase generally regarded as characteristic for two-dimensional (2D) electronic systems, and its many aspects can be understood without invoking electron-electron interaction. The intriguing possibility of generalizing QHE to three-dimensional (3D) systems was proposed decades ago, yet it remains elusive experimentally. Here, we report clear experimental evidence for the 3D QHE observed in bulk ZrTe5 crystals. Owing to the extremely high sample quality, the extreme quantum limit with only the lowest Landau level occupied can be achieved by an applied magnetic field as low as 1.5 T. Remarkably, in this regime, we observe a dissipationless longitudinal resistivity rho_xx=0 accompanied with a well-developed Hall resistivity plateau rho_xy=(1\pm0.1) h/e^2 (λ_(F,z)/2), where λ_(F,z) is the Fermi wavelength along the field direction (z axis). This striking result strongly suggests a Fermi surface instability driven by the enhanced interaction effects in the extreme quantum limit. In addition, with further increasing magnetic field, both rho_xx and rho_xy increase dramatically and display an interesting metal-insulator transition, representing another magnetic field driven quantum phase transition. Our findings not only unambiguously reveal a novel quantum state of matter resulting from an intricate interplay among dimensionality, interaction, and symmetry breaking, but also provide a promising platform for further exploration of more exotic quantum phases and transitions in 3D systems.

cond-mat.mtrl-sci↗

arXiv2018

Topological Zero-Line Modes in Folded Bilayer Graphene

We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate potential enables tunable topologically conducting channels to be formed in the folded region, and that a perpendicular magnetic field can be used to enhance the conducting when external impurities are present. We also show experimentally that our proposed folded bilayer graphene structure can be fabricated in a controllable manner. Our proposed system greatly simplifies the technical difficulty in the original proposal by considering a planar bilayer graphene (i.e., precisely manipulating the alignment between vertical and lateral gates on bilayer graphene), laying out a new strategy in designing practical low-power electronics by utilizing the gate induced topological conducting channels.

cond-mat.mes-hall↗

arXiv2018

Enhanced Robustness of Zero-line Modes in Graphene via a Magnetic Field

Motivated by recent experimental results for zero-line modes (ZLMs) in a bilayer graphene system [Nature Nanotechnol. 11, 1060 (2016)], we systematically studied the influence of a magnetic field on ZLMs and demonstrated the physical origin of the enhanced robustness by employing nonequilibrium Green's functions and the Landauer-Buttiker formula. We found that a perpendicular magnetic field can separate the wavefunctions of the counter-propagating kink states into opposite directions. Specifically, the separation vanishes at the charge neutrality point. The separation increases as the Fermi level deviates from the charge neutrality point and can reach a magnitude comparable to the wavefunction spread at a moderate field strength. Such spatial separation of oppositely propagating ZLMs effectively suppresses backscattering. Moreover, the presence of a magnetic field enlarges the bulk gap and suppresses the bound states, thereby further reducing the scattering. These mechanisms effectively increase the mean free paths of the ZLMs to approximately 1 micron in the presence of a disorder.

cond-mat.mes-hall↗

arXiv2018

Universal Current Correlations Induced by the Majorana and Fermionic Andreev Bound States

Due to their nonlocality, Majorana bound states have been proposed to induce current-current correlations (CCCs) that are completely different from those induced by low-energy fermionic Andreev bound states. Such characteristics can be used as a signature to detect Majorana bound states. Herein, we studied the Majorana and fermionic Andreev bound states in a two-dimensional topological insulator system. We found that nonlocality occurs for both types of bound states and that their coupling strengths depend on system parameters in the same pattern. Majorana and fermionic Andreev bound states show the same differential CCCs characteristics, thereby indicating a universal behavior for both types of bound states. The maximal cross differential CCCs are robust to the structural asymmetry of the system.

cond-mat.supr-con↗

arXiv2018

Quantum Anomalous Hall Effect and Giant Rashba Spin-Orbit Splitting in Compensated n-p--Codoped Graphene

Quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon in condensed matter physics. Until now, the only experimental realization of the QAHE has been observed for Cr/V-doped (Bi,Sb)$_2$Te$_3$ but at extremely low observational temperature, thereby limiting its potential application in dissipationless quantum electronics. Employing first-principles calculations, we study the electronic structures of graphene codoped with 5\textit{d} transition metal and boron (B) atoms based on a compensated \textit{n}--\textit{p} codoping scheme. Our findings are as follows. 1) The electrostatic attraction between the \textit{n}- and \textit{p}-type dopants effectively enhances the adsorption of metal adatoms and suppresses their undesirable clustering. 2) Hf--B and Os--B codoped graphene systems can establish long-range ferromagnetic order and open nontrivial band gaps because of the spin-orbit coupling with the non-vanishing Berry curvatures to host the QAHE. 3) The calculated Rashba splitting energy in Re--B and Pt--B codoped graphene systems can reach up to 158 and 85~meV, respectively, which is several orders of magnitude higher than the reported intrinsic spin-orbit coupling strength.

cond-mat.mes-hall↗

arXiv2017

Current partition at zero-line intersection of quantum anomalous Hall topologies

At the interface between two-dimensional materials with different topologies, topologically protected one-dimensional states (also named as zero-line modes) arise. Here, we focus on the quantum anomalous Hall effect based zero-line modes formed at the interface between regimes with different Chern numbers. We find that, these zero-line modes are chiral and unilaterally conductive due to the breaking of time-reversal invariance. For a beam splitter consisting of two intersecting zero lines, the chirality ensures that current can only be injected from two of the four terminals. Our numerical results further show that, in the absence of contact resistance, the (anti-)clockwise partitions of currents from these two terminals are the same owing to the current conservation, which effectively simplifies the partition laws. We find that the partition is robust against relative shift of Fermi energy, but can be effectively adjusted by tuning the relative magnetization strengths at different regimes or relative angles between zero lines.

cond-mat.mes-hall↗

arXiv2017

In-Plane Magnetization Induced Quantum Anomalous Hall Effect in Atomic Crystals of Group-V Elements

We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general tight-binding Hamiltonian with $sp^3$ orbitals via Slater-Koster two-center approximation, and then numerically show that for weak and strong spin-orbit couplings the systems harbor QAHEs with Chern numbers of $\mathcal{C}=\pm1$ and $\pm2$ , respectively. For the $\mathcal{C}=\pm1$ phases, we find the critical phase-transition magnetization from a trivial insulator to QAHE can become extremely small by tuning the spin-orbit coupling strength. Although the resulting band gap is small, it can be remarkably enhanced by orders via tilting the magnetization slightly away from the in-plane orientation. For the $\mathcal{C}=\pm2$ phases, we find that the band gap is large enough for the room-temperature observation. Although the critical magnetization is relatively large, it can be effectively decreased by applying a strain. All these suggest that it is experimentally feasible to realize high-temperature QAHE from in-plane magnetization in atomic crystal layers of group-V elements.

cond-mat.mes-hall↗

arXiv2017

Realization of Quantum Anomalous Hall Effect in Graphene from \textit{n}-\textit{p} Codoping Induced Stable Atomic-Adsorption

Using first-principles calculation methods, we study the possibility of realizing quantum anomalous Hall effect in graphene from stable 3\textit{d}-atomic adsorption via charge-compensated \textit{n}-\textit{p} codoping scheme. As concrete examples, we show that long-range ferromagnetism can be established by codoping 3\textit{d} transition metal and boron atoms, but only the Ni codopants can open up a global bulk gap to harbour the quantum anomalous Hall effect. Our estimated ferromagnetic Curie transition temperature can reach over 10 Kelvin for various codoping concentrations.

cond-mat.mtrl-sci↗

arXiv2017

Perfectly Conducting Graphene Electronic Waveguide with Curved Channels

We theoretically investigate the electronic transport properties of curved graphene waveguides by employing non-equilibrium Green's function techniques. We systematically study the dependence of the confined waveguide modes on the potential difference, the width of waveguide and side barrier. Through two-terminal electronic transport calculations, we show that the conductance of confined waveguide modes is rather robust against the bending degree of waveguide, in consistent with the band insensitivity to the side barrier. This finding of the perfectly conducting channels strongly suggests the possibility of applying the graphene waveguide in the design of low-power nanoelectronics.

cond-mat.mes-hall↗

arXiv2017

Gate tunable current partition in graphene based topological zero lines

We demonstrate new mechanisms for gate tunable current partition at topological zero-line intersections in a graphene-based current splitter. Based on numerical calculations of the non-equilibrium Green's functions and Landauer-Büttiker formula, we show that the presence of a perpendicular magnetic field on the order of a few Teslas allows for carrier sign dependent current routing. In the zero-field limit the control on current routing and partition can be achieved within a range of $10\%$-$90\%$ of the total incoming current by tuning the carrier density at tilted intersections, or by modifying the relative magnitude of the bulk band gaps via gate voltage. We discuss the implications of our findings in the design of topological zero-line networks where finite orbital magnetic moments are expected when the current partition is asymmetric.

cond-mat.mes-hall↗

arXiv2017

Quantum anomalous Hall effect in atomic crystal layers from in-plane magnetization

We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror reflection symmetry. We take the honeycomb lattice as an example, where we find that the low-buckled structure, which makes the system satisfy the symmetric criteria, is crucial to induce QAHE. The topologically nontrivial bulk gap carrying a Chern number of $\mathcal{C}=\pm1$ opens in the vicinity of the saddle points $M$, where the band dispersion exhibits strong anisotropy. We further show that the QAHE with electrically tunable Chern number can be achieved in Bernal-stacked multilayer systems, and the applied interlayer potential differences can dramatically decrease the critical magnetization to make the QAHE experimentally feasible.

cond-mat.mes-hall↗

arXiv2017

Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling

We numerically investigate the electronic transport properties of graphene nanoribbons and carbon nanotubes with inter-valley coupling, e.g., in \sqrt{3}N \times \sqrt{3}N and 3N \times 3N superlattices. By taking the \sqrt{3} \times \sqrt{3} graphene superlattice as an example, we show that tailoring the bulk graphene superlattice results in rich structural configurations of nanoribbons and nanotubes. After studying the electronic characteristics of the corresponding armchair and zigzag nanoribbon geometries, we find that the linear bands of carbon nanotubes can lead to the Klein tunnelling-like phenomenon, i.e., electrons propagate along tubes without backscattering even in the presence of a barrier. Due to the coupling between K and K' valleys of pristine graphene by \sqrt{3} \times \sqrt{3} supercells,we propose a valley-field-effect transistor based on the armchair carbon nanotube, where the valley polarization of the current can be tuned by applying a gate voltage or varying the length of the armchair carbon nanotubes.

cond-mat.mes-hall↗