arXiv subjects

Zhi-Gang Chen

Publications and source records attributed to Zhi-Gang Chen.

9 recordsLinked to original sources

arXiv2024

A free-space coupled, large-active-area superconducting microstrip single-photon detector for photon-counting time-of-flight imaging

Numerous applications at the photon-starved regime require a free-space coupling singlephoton detector with a large active area, low dark count rate (DCR), and superior time resolutions. Here,we developed a superconducting microstrip single-photon detector (SMSPD), with a large active area of 260 um in diameter, a DCR of ~5 kcps, and a low time jitter of ~171 ps, operated at near-infrared of 1550 nm. As a demonstration, we applied the detector to a single-pixel galvanometer scanning system and successfully reconstructed object information in depth and intensity using a time-correlated photon counting technology.

physics.app-ph↗

arXiv2023

Characterization of a Superconducting Microstrip Single-Photon Detector Shunted with an External Resistor

A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 Ω. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.

physics.ins-det↗

arXiv2023

High-efficiency broadband fiber-to-chip coupler using a 3D nanoprinting microfiber

We propose a method for coupling a tapered optical fiber to an inverted tapered SiN waveguide by fabricating a microfiber using 3D nanoprinting lithography. The microfiber consists of three parts: a tapered cladding cap, an S-bend, and a straight part, all composed of high-refractive-index material. Light is adiabatically coupled from the tapered fiber to the printed microfiber through the cladding cap. The light is then transmitted through the S-bend and the straight part with low loss and is finally coupled to the waveguide through the evanescent field. In the simulation, our design can achieve a high coupling efficiency (TE mode) of ~97% at a wavelength of 1542 nm with a wide bandwidth of ~768 nm at the 1-dB cut-off criterion.

physics.optics↗

arXiv2018

Fundamental and Progress of Bi2Te3-based Thermoelectric Materials

Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experimental demonstrations, significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials. In this review, we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties. On this basis, we studied the effect of material parameters on thermoelectric properties. Then, we analyzed the features of Bi2Te3-based thermoelectric materials, including the lattice defects, anisotropic behavior and the strong bipolar conduction at relatively high temperature. Then we accordingly summarized the strategies for enhancing the thermoelectric performance, including point defect engineering, texture alignment, and band gap enlargement. Moreover, we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method, ball milling, and melt spinning. Lastly, we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3, which will enlighten the enhancement of thermoelectric performance in broader materials.

cond-mat.mtrl-sci↗

arXiv2016

Room-temperature chiral charge pumping in Dirac semimetals

Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusion in Cd3As2. Apart from the conventional negative magnetoresistance, we observe an unusual nonlocal response with negative field dependence up to room temperature, originating from the diffusion of valley polarization. Furthermore, a large magneto-optic Kerr effect generated by parallel electric and magnetic fields is detected. These new experimental approaches provide a quantitative analysis of the chiral anomaly phenomenon which is inaccessible previously. The ability to manipulate the valley polarization in topological semimetal at room temperature opens up a brand-new route towards understanding its fundamental properties and utilizing the chiral fermions.

cond-mat.mtrl-sci↗

arXiv2016

Limit of zT enhancement in rock-salt structured chalcogenides by band convergence?

Rock-salt structured chalcogenides, such as PbTe, PbSe, and SnTe, are the top candidates for mid-temperature thermoelectric applications, and their p-type thermoelectric efficiencies can be enhanced via aligning the valence bands. Here, we provided comprehensive numerical investigations on the effects of band convergence on electronic properties. We found that the extra valance band can indeed significantly enhance the power factor. Nevertheless, the extra valance band can also increase the electronic thermal conductivity, which partially offsets the enhanced power factor for the overall figure-of-merit. Finally, we predicted that the maximum figure-of-merit for PbTe, PbSe, and SnTe can reach to 2.2, 1.8, and 1.6, re-spectively, without relying on the reduction in lattice thermal conductivity.

cond-mat.mtrl-sci↗

arXiv2015

Landau level splitting in Cd3As2 under high magnetic fields

Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed that TDSs can be driven to other exotic phases like Weyl semimetals, topological insulators and topological superconductors by breaking certain symmetries. Here we report the first transport experiment on Landau level splitting in TDS Cd3As2 single crystals under high magnetic fields, suggesting the removal of spin degeneracy by breaking time reversal symmetry. The detected Berry phase develops an evident angular dependence and possesses a crossover from nontrivial to trivial state under high magnetic fields, a strong hint for a fierce competition between the orbit-coupled field strength and the field-generated mass term. Our results unveil the important role of symmetry breaking in TDSs and further demonstrate a feasible path to generate a Weyl semimetal phase by breaking time reversal symmetry.

cond-mat.mtrl-sci↗

arXiv2015

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

cond-mat.mtrl-sci↗