arXiv subjects

Zhipeng Hou

Publications and source records attributed to Zhipeng Hou.

30 records · Page 2Linked to original sources

arXiv2019

Manipulating the Topology of Nanoscale Skyrmion Bubbles by Spatially Geometric Confinement

The discovery of magnetic skyrmion bubbles in centrosymmetric magnets has been receiving increasing interest from the research community, due to the fascinating physics of topological spin textures and its possible applications to spintronics. However, key challenges remain, such as how to manipulate the nucleation of skyrmion bubbles to exclude the trivial bubbles or metastable skyrmion bubbles that usually coexist with skyrmion bubbles in the centrosymmetric magnets. Here, we report having successfully performed this task by applying spatially geometric confinement to a centrosymmetric frustrated Fe3Sn2 magnet. We demonstrate that the spatially geometric confinement can indeed stabilize the skyrmion bubbles, by effectively suppressing the formation of trivial bubbles and metastable skyrmion bubbles. We also show that the critical magnetic field for the nucleation of the skyrmion bubbles in the confined Fe3Sn2 nanostripes is drastically less, by an order of magnitude, than that what is required in the thin plate without geometrical confinement. By analyzing how the width and thickness of the nanostripes affect the spin textures of skyrmion bubbles, we infer that the topological transition of skyrmion bubbles is closely related to the dipole-dipole interaction, which we find is consistent with theoretical simulations. The results presented here represent an important step forward in manipulating the topological spin textures of skyrmion bubbles, making us closer to achieving the fabrication of skyrmion-based racetrack memory devices.

cond-mat.mes-hall↗

arXiv2019

Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe

Nanoscale topologically non-trivial spin textures, such as magnetic skyrmions, have been identified as promising candidates for the transport and storage of information for spintronic applications, notably magnetic racetrack memory devices. The design and realization of single skyrmion chain at room temperature (RT) and above in the low-dimensional nanostructures are of great importance for future practical applications. Here, we report the creation of a single skyrmion bubble chain in a geometrically confined Fe3Sn2 nanostripe with a width comparable to the featured size of a skyrmion bubble. Systematic investigations on the thermal stability have revealed that the single chain of skyrmion bubbles can keep stable at temperatures varying from RT up to a record-high temperature of 630 K. This extreme stability can be ascribed to the weak temperature-dependent magnetic anisotropy and the formation of edge states at the boundaries of the nanostripes. The realization of the highly stable skyrmion bubble chain in a geometrically confined nanostructure is a very important step towards the application of skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2019

Current-Induced Helicity Reversal of a Single Skyrmionic Bubble Chain in a Nanostructured Frustrated Magnet

Helicity indicates the in-plane magnetic-moment swirling direction of a skyrmionic configuration. The ability to reverse the helicity of a skyrmionic bubble via purely electrical means has been predicted in frustrated magnetic systems, however its experimental observation has remained challenging. Here, we experimentally demonstrate the current-driven helicity reversal of the skyrmionic bubble in a nanostructured frustrated Fe3Sn2 magnet. The critical current density required to trigger the helicity reversal is 109 - 1010 A/m2, with a corresponding pulse-width varying from 1 μs to 100 ns. Computational simulations reveal that both the pinning effect and dipole-dipole interaction play a crucial role in the helicity-reversal process.

cond-mat.mes-hall↗

arXiv2019

Current-Driven Dynamics of Frustrated Skyrmions in a Synthetic Antiferromagnetic Bilayer

We report the current-driven dynamics of frustrated skyrmions in an antiferromagnetically exchange coupled bilayer system, where the bilayer skyrmion consists of two monolayer skyrmions with opposite skyrmion numbers $Q$. We show that the in-plane current-driven bilayer skyrmion moves in a straight path, while the out-of-plane current-driven bilayer skyrmion moves in a circular path. It is found that the in-plane current-driven mobility of a bilayer skyrmion is much better than the monolayer one at a large ratio of $β/α$, where $α$ and $β$ denote the damping parameter and non-adiabatic spin transfer torque strength, respectively. Besides, the out-of-plane current-driven mobility of a bilayer skyrmion is much better than the monolayer one when $α$ is small. We also reveal that one bilayer skyrmion (consisting of monolayer skyrmions with $Q=\pm 2$) can be separated to two bilayer skyrmions (consisting of monolayer skyrmions with $Q=\pm 1$) driven by an out-of-plane current. Our results may be useful for designing skyrmionic devices based on frustrated multilayer magnets.

cond-mat.mes-hall↗

arXiv2018

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71° head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.

cond-mat.mes-hall↗

arXiv2017

Observation of Various and Spontaneous Magnetic Skyrmionic Bubbles at Room-Temperature in a Frustrated Kagome Magnet with Uniaxial Magnetic Anisotropy

Various and spontaneous magnetic skyrmionic bubbles are experimentally observed for the first time, at room temperature in a frustrated kagome magnet Fe3Sn2 with unixial magnetic anisotropy. The magnetization dynamics were investigated using in-situ Lorentz transmission electron microscopy, revealing that the transformation between different magnetic bubbles and domains are via the motion of Bloch lines driven by applied external magnetic field. The results demonstrate that Fe3Sn2 facilitates a unique magnetic control of topological spin textures at room temperature, making it a promising candidate for further skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2016

A centrosymmetric hexagonal magnet with superstable biskyrmion magnetic nanodomains in a wide temperature range of 100K to 340K

Here, we report on the experimental discovery of biskyrmion magnetic nanodomains at RT and the observation of a biskyrmion-derived topological Hall effect (THE) in the centrosymmetric hexagonal MnNiGa magnet. Using a phase reconstruction technique based on a transport-of-intensity equation (TIE), we established the texture of the biskyrmion spin. Results from Lorentz transmission electron microscopy (TEM) and the topological Hall effect revealed that the biskyrmion phase is stable over a much wider temperature range (100 K to ~340K) and a larger magnetic field range in our material than in skyrmion-hosting bulk crystals reported previously[1-3,6]. The super-wide operating temperature and the broad range of material options indicate important progress toward the realization of skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2016

NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds

Spin-orbit coupling (SOC) is expected to partly determine the topologically nontrivial electronic structure of heavy half-Heusler ternary compounds. However, to date, attempts to experimentally observe either the strength of SOC or how it modifies the bulk band structure have been unsuccessful. By using bulk-sensitive nuclear magnetic resonance (NMR) spectroscopy combined with first-principles calculations, we reveal that 209Bi NMR isotropic shifts scale with relativity in terms of the strength of SOC and average atomic numbers, indicating strong relativistic effects on NMR parameters. According to first-principles calculations, we further claim that nuclear magnetic shieldings from relativistic p1/2 states and paramagnetic contributions from low-lying unoccupied p3/2 states are both sensitive to the details of band structures tuned by relativity, which explains why the hidden relativistic effects on band structure can be revealed by 209Bi NMR isotropic shifts in topologically nontrivial half-Heusler compounds. Used in complement to surface-sensitive methods, such as angle resolved photon electron spectroscopy and scanning tunneling spectroscopy, NMR can provide valuable information on bulk electronic states.

cond-mat.str-el↗

arXiv2015

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2K - 2016 cm2V-1s-1 at 300K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors, but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.

cond-mat.str-el↗

arXiv2015

Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.

cond-mat.str-el↗

arXiv2014

NMR evidence for enhanced orbital diamagnetism in topologically nontrivial half-Heusler semimetals

209Bi nuclear magnetic resonance (NMR) spectroscopy was employed to probe potential spin-orbit effects on orbital diamagnetism in YPtBi and YPdBi crystals. The observed opposite sign and temperature dependent magnitude of 209Bi NMR shifts of both crystals reveal experimental signatures of enhanced orbital diamagnetism induced by spin-orbit interactions. This investigation indicates that NMR isotropic shifts might be beneficial in search of interesting spin-electronic phases among a vast number of topological nontrivial half-Heusler semimetals.

cond-mat.str-el↗