arXiv subjects

Zhong Fang

Publications and source records attributed to Zhong Fang.

At least 37 records · Page 2Linked to original sources

arXiv2025

SDW driven "magnetic breakdown" in a d-wave altermagnet KV$_2$Se$_2$O

Altermagnets, combining zero net magnetization with intrinsic spin splitting, demonstrate unique quantum phenomena crucial for spintronic applications. KV$_2$Se$_2$O is proven to be a d-wave altermagnet with phase transition from a checkerboard-type (C-type) antiferromagnetic (AFM) state to a spin density wave (SDW) state as the temperature decreases. After phase transition, the apparent paradox emerges where angle-resolved photoemission spectroscopy (ARPES) reveals negligible Fermi surface modifications, while physical property measurement system (PPMS) measurements uncover substantial changes in transport properties. Our study explores the microscopic mechanisms governing phase-dependent transport properties of KV$_2$Se$_2$O base on first-principles calculations. The spin canting driven by periodic spin modulation in the SDW phase reduces the magnetic symmetry of KV$_2$Se$_2$O. The resultant band degeneracy lifting and Fermi surface reconstruction induce the ``magnetic breakdown" phenomenon, which alters carrier trajectories, modifies carrier concentration, strengthens electron-hole compensation, and ultimately accounts for the contrasting magnetic-field-dependent Hall resistivity relative to the C-type AFM state. Our work proposes an innovative method for identifying the electronic structure evolution across phase transitions from transport signatures, providing a novel paradigm for altermagnets research.

cond-mat.mtrl-sci↗

arXiv2025

Materials discovery acceleration by using condition generative methodology

With the rapid advancement of AI technologies, generative models have been increasingly employed in the exploration of novel materials. By integrating traditional computational approaches such as density functional theory (DFT) and molecular dynamics (MD), existing generative models, including diffusion models and autoregressive models, have demonstrated remarkable potential in the discovery of novel materials. However, their efficiency in goal-directed materials design remains suboptimal. In this work we developed a highly transferable, efficient and robust conditional generation framework, PODGen, by integrating a general generative model with multiple property prediction models. Based on PODGen, we designed a workflow for the high-throughput crystals conditional generation which is used to search new topological insulators (TIs). Our results show that the success rate of generating TIs using our framework is 5.3 times higher than that of the unconstrained approach. More importantly, while general methods rarely produce gapped TIs, our framework succeeds consistently, highlighting an effectively $\infty$ improvement. This demonstrates that conditional generation significantly enhances the efficiency of targeted material discovery. Using this method, we generated tens of thousands of new topological materials and conducted further first-principles calculations on those with promising application potential. Furthermore, we identified promising, synthesizable topological (crystalline) insulators such as CsHgSb, NaLaB$_{12}$, Bi$_4$Sb$_2$Se$_3$, Be$_3$Ta$_2$Si and Be$_2$W.

cond-mat.mtrl-sci↗

arXiv2025

A Framework for Understanding Colossal Magnetoresistance and Complex Resistivity Behaviors in Magnetic Semiconductor

Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a metal-insulator transition (MIT). Previous research efforts primarily focused on elucidating the CMR effect in ferromagnetic semiconductor systems, which may be inapplicable to antiferromagnetic or ferrimagnetic systems. In our work, we propose a framework to unravel the mechanisms underlying the CMR related phenomenon in magnetic semiconductor, and apply it to the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$. A two-carrier model, with electron and hole carriers generated by thermal excitation across the magnetization-dependent band gap, is employed, which accurately reproduces the observed $ρ(B, T)$ curves. Additionally, the shift of $T_c$ (or the anomalous resistivity peak) with increasing direct currents, previously attributed to current control of the chiral orbital current (COC) state, is also reproduced within our framework by properly accounting for the Joule heating effects. Our work provides a quantitative methodology for analyzing and calculating the novel resistivity curves in magnetic semiconductors and clarifies the controversy surrounding the origins of CMR and the concomitant complex behaviors.

cond-mat.mtrl-sci↗

arXiv2025

Manipulation of topological phase transitions and the mechanism of magnetic interactions in Eu-based Zintl-phase materials

Various topological phases, including topological insulators, topological semimetals, and topological superconductors, along with the controllable topological phase transitions, have attracted considerable attention due to their promising applications in spintronics and quantum computing. In this work, we propose two distinct methods for manipulating topological phase transitions in magnetic materials. First, by varying the strength of electron correlation effects, we induce a series of topological state transitions within the EuM$_2$X$_2$ (M = Zn, Cd; X = P, As, Sb) family of Zintl materials, including magnetic topological crystalline insulators (TCIs) and magnetic Dirac semimetals. Our findings indicate that strong electron correlation effects tend to influence the emergence of topological phases. Second, by reducing the electronegativity of the pnictogen X (from P to As and Sb), we observe a similar transition from trivial insulator to magnetic Dirac semimetal or magnetic TCI. This suggests that weaker electronegativity favors the emergence of topological phases. Furthermore, we establish a Heisenberg model to describe the magnetic interactions of the EuM$_2$X$_2$ system, based on which we perform Monte Carlo simulations of specific heat and magnetic susceptibility, yielding Néel temperatures that perfectly match experimental data. This suggests that the local magnetic moment framework provides an accurate description of the magnetization behavior in this family of materials. This work provides the potential for the experimental manipulation of topological phase transitions and their possible applications, while also enhancing the understanding of the magnetic interactions within the EuM$_2$X$_2$ system and offering a theoretical foundation for future applications in magnetism.

cond-mat.mtrl-sci↗

arXiv2025

DPmoire: A tool for constructing accurate machine learning force fields in moiré systems

In moiré systems, the impact of lattice relaxation on electronic band structures is significant, yet the computational demands of first-principles relaxation are prohibitively high due to the large number of atoms involved. To address this challenge, We introduce a robust methodology for the construction of machine learning potentials specifically tailored for moiré structures and present an open-source software package DPmoire designed to facilitate this process. Utilizing this package, we have developed machine learning force fields (MLFFs) for MX$_2$ (M = Mo, W; X = S, Se, Te) materials. Our approach not only streamlines the computational process but also ensures accurate replication of the detailed electronic and structural properties typically observed in density functional theory (DFT) relaxations. The MLFFs were rigorously validated against standard DFT results, confirming their efficacy in capturing the complex interplay of atomic interactions within these layered materials. This development not only enhances our ability to explore the physical properties of moiré systems with reduced computational overhead but also opens new avenues for the study of relaxation effects and their impact on material properties in two-dimensional layered structures.

cond-mat.mes-hall↗

arXiv2025

Observation of topological Anderson Chern insulator phase in MnBi$_4$Te$_7$ monolayer

The correlation of topology and disorder has attracted great intention due to appropriate disorder could induce the phase transition between trivial and nontrivial topological states. While it is widely recognized that strong disorder can produce rich phase diagrams in topological nontrivial states, moderate disorder has been proposed to induce transitions into topologically nontrivial phases counter-intuitively, leading to the concept of topological Anderson insulators. This phenomenon has been theoretically explored and simulated in various systems, yet experimental realization in solid state systems has remained elusive due to challenges in controlling disorder. Here, we report the experimental observation of Chern insulator state signed by the coexistence of quantized Hall plateau and zero longitudinal resistance in monolayer MnBi$_4$Te$_7$ Hall bar device, which originally hosts a trivial insulating state with Chern number $C$ = 0 in clean limit. We demonstrate that the observed trivial to nontrivial transition in this monolayer device can be attributed to disorder, evidenced by universal conductance fluctuations. Our findings substantiate the existence of a long-sought topological Anderson Chern insulator in real materials, a unique variant of the topological Anderson insulator characterized by broken time-reversal-symmetry.

cond-mat.mes-hall↗

arXiv2025

Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to engineer topological field effect devices. More precisely, we first present a novel topological logic device that operates without a topological phase transition. Subsequently, we design a high-performance topological transistor due to the presence of edge states. Our approach provides a potential framework for harnessing the unique features of QSHI in device design, paving the way for future topological devices.

cond-mat.mtrl-sci↗

arXiv2024

Axion insulator, Weyl points, quantum anomalous Hall effect and magnetic topological phase transition in Eu3In2As4

The magnetic topological phases attract much interest, such as the axion insulator, higher-order topology, Weyl semimetals, and the quantum anomalous Hall effect (QAHE). Here, we predict that the axion insulator phase, magnetic Weyl points, and QAHE can be achieved in Eu3In2As4. Recently, the single-crystal Eu3In2As4 has been successfully synthesized, which exhibits an antiferromagnetic (AFM) ground state. Our first-principles calculations show that it lies on the phase boundary between multiple magnetic topological phases, and the magnetic anisotropy is weak, with an energy difference less than 1 meV. In the AFM state, it can be tuned to an axion insulator by tensile strain. The quantized axion angle $θ= π$ and the magnetic higher-order topology are characterized by the parity index $Z_4 = 2$. By applying an external magnetic field, the induced ferromagnetic (FM) state becomes an ideal magnetic topological semimetal with a single pair of Weyl points or a nodal ring. The QAHE can be achieved in FM multilayer films of Eu3In2As4 on a magnetic insulating substrate.

cond-mat.mtrl-sci↗

arXiv2024

Scaling Behavior of Magnetoresistance and Hall Resistivity in Altermagnet CrSb

The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to exhibit substantial spin splitting near the Fermi level. After successfully growing high-quality CrSb single crystals, we performed comprehensive magnetization, magnetoresistance (MR), and Hall resistivity measurements, along with the electronic structure, and Fermi surface (FS) calculations, as well as the magneto-transport property numerical simulations. An antiferromagnetic transition occurring at $T_{N}$ = 712 K was reconfirmed. It was found that both experimental MR and Hall resistivity are consistent with the numerical simulation results, and exhibit obvious scaling behavior. The nonlinear Hall resistivity is due to its multi-band structure, rather than an anomalous Hall effect (AHE). Especially, the scaling behavior in Hall resistivity is first observed within an AM material. These findings demonstrate that the magneto-transport properties in CrSb originate from the intrinsic electronic structure and are dominated by the Lorentz force.

cond-mat.mtrl-sci↗

arXiv2024

Constructions and Applications of Irreducible Representations of Spin-Space Groups

Spin-space groups (SSGs), including the traditional space groups (SGs) and magnetic space groups (MSGs) as subsets, describe the complete symmetries of magnetic materials with weak spin-orbit coupling (SOC). In the present work, we systematically study the irreducible representations (irreps) of SSGs by focusing on the projective irreps of the little co-group $L(k)$ of any momentum point $\pmb k$. We analysis the factor systems of $L(k)$, and then reduce the projective regular representation of $L(k)$ into direct sum of irreps using the Hamiltonian approach. Especially, for collinear SSGs which contain continuous spin rotation operations, we adopt discrete subgroups to effectively capture their characteristics. Furthermore, we apply the representation theory of SSGs to study the band structure of electrons and magnons in magnetic materials. After identifying the SSG symmetry group, we extract relevant irreps and determine the $k\cdot p$ models. As an example, we illustrate how our approach works for the material \ch{Mn3Sn}. Degeneracies facilitated by SSG symmetry are observed, underscoring the effectiveness of application in material analysis. The SSG recognition and representation code is uploaded to GitHub, the information of irreps of all SSGs is also available in the online Database. Our work provides a practical toolkit for exploring the intricate symmetries of magnetic materials and paves the way for future advances in materials science.

cond-mat.mtrl-sci↗

arXiv2024

Enumeration of spin-space groups: Towards a complete description of symmetries of magnetic orders

Symmetries of three-dimensional periodic scalar fields are described by 230 space groups (SGs). Symmetries of three-dimensional periodic (pseudo-) vector fields, however, are described by the spin-space groups (SSGs), which were initially used to describe the symmetries of magnetic orders. In SSGs, the real-space and spin degrees of freedom are unlocked in the sense that an operation could have different spacial and spin rotations. SSGs gives a complete symmetry description of magnetic structures, and have natural applications in the band theory of itinerary electrons in magnetically ordered systems with weak spin-orbit coupling. Altermagnetism, a concept raised recently that belongs to the symmetry-compensated collinear magnetic orders but has non-relativistic spin splitting, is well described by SSGs. Due to the vast number and complicated group structures, SSGs have not yet been systematically enumerated. In this work, we exhaust SSGs based on the invariant subgroups of SGs, with spin operations constructed from three-dimensional (3D) real representations of the quotient groups for the invariant subgroups. For collinear and coplanar magnetic orders, the spin operations can be reduced into lower dimensional real representations. As the number of SSGs is infinite, we only consider SSGs that describe magnetic unit cells up to 12 times crystal unit cells. We obtain 157,289 non-coplanar, 24,788 coplanar-non-collinear, and 1,421 collinear SSGs. The enumerated SSGs are stored in an online database at \url{https://cmpdc.iphy.ac.cn/ssg} with a user-friendly interface. We also develop an algorithm to identify SSG for realistic materials and find SSGs for 1,626 magnetic materials. Our results serve as a solid starting point for further studies of symmetry and topology in magnetically ordered materials.

cond-mat.mtrl-sci↗

arXiv2024

Hinge Majorana Flat Band in Type-II Dirac Semimetals

Type-II Dirac semimetals exhibit a unique Fermi surface topology, which allows them to host novel topological superconductivity (TSC). We reveal a novel inter-orbital superconducting state, corresponding to the B1u and B2u pairings under the D4h point group. Intriguingly, we find that both first- and second-order TSC coexist in this novel state. It is induced by a dominant inter-orbital attraction and possesses surface helical Majorana cones and hinge Majorana flat bands, spanning the entire z-directed hinge Brillouin zone. Further investigation uncovers that these higher-order hinge modes are robust against the C4z symmetry-breaking perturbation.

cond-mat.supr-con↗

arXiv2024

Excitonic Instability in Ta2Pd3Te5 Monolayer

By systematic theoretical calculations, we have revealed an excitonic insulator (EI) in the Ta2Pd3Te5 monolayer. The bulk Ta2Pd3Te5 is a van der Waals (vdW) layered compound, whereas the vdW layer can be obtained through exfoliation or molecular-beam epitaxy. First-principles calculations show that the monolayer is a nearly zero-gap semiconductor with the modified Becke-Johnson functional. Due to the same symmetry of the band-edge states, the two-dimensional polarization $α_{2D}$ would be finite as the band gap goes to zero, allowing for an EI state in the compound. Using the first-principles many-body perturbation theory, the GW plus Bethe-Salpeter equation calculation reveals that the exciton binding energy is larger than the single-particle band gap, indicating the excitonic instability. The computed phonon spectrum suggests that the monolayer is dynamically stable without lattice distortion. Our findings suggest that the Ta2Pd3Te5 monolayer is an excitonic insulator without structural distortion.

cond-mat.mtrl-sci↗

arXiv2024

Majorana corner modes in unconventional monolayers of the 1T-PtSe2 family

In this work, we propose that Majorana zero modes can be realized at the corners of the two-dimensional unconventional insulator. We demonstrate that 1T-PtSe2 is a symmetry indicator-free (SI-free) unconventional insulator, originating from orbital hybridization between Pt $d$ and Se $p_{x,y}$ states. The kind of SI-free unconventionality has no symmetry eigenvalue indication. Instead, it is diagnosed directly by the Wannier charge centers by using the one-dimensional Wilson loop method. The obstructed edge states exhibit strong anisotropy and large Rashba splitting. By introducing superconducting proximity and an external magnetic field, the Majorana corner modes can be obtained in the 1T-PtSe2 monolayer. In the end, we construct a two-Bernevig-Hughes-Zhang model with anisotropy to capture the Majorana physics.

cond-mat.mtrl-sci↗

arXiv2024

The inadequacy of the $ρ$-T curve for phase transitions in the presence of magnetic fields

The $ρ(T)$ curve is traditionally employed to discern metallic, semiconductor, and insulating behaviors in materials, with any deviations often interpreted as indicative of phase transitions. However, does this interpretation hold under the influence of a magnetic field? Our research addresses this critical question by reevaluating the $ρ(T)$ curve in the presence of magnetic field. We uncover that metal-insulator shifts and reentrant metallic states may not indicate true phase transitions but rather originate from the scaling behavior of magnetoresistance, influenced by magnetic field and temperature through a power-law dependence. Employing advanced first-principles calculations and the Boltzmann method, we analyzed the magnetoresistance of SiP$_2$ and NbP across a range of conditions, successfully explaining not only the reentrant behavior observed in experiments but also resolving the discrepancies in magnetoresistance behavior reported by different research groups. These findings challenge the conventional use of the $ρ(T)$ curve as a straightforward indicator of phase transitions under magnetic conditions, highlighting the essential need to exclude typical magnetoresistance effects due to the Lorentz force before confirming such transitions. This novel insight reshapes our understanding of complex material properties in magnetic fields and sets a new precedent for the interpretation of transport phenomena in condensed matter physics.

cond-mat.mtrl-sci↗

arXiv2024

Unconventional phonon spectra and obstructed edge phonon modes

Based on the elementary band representations (EBR), some topologically trivial materials are classified as unconventional ones (obstructed atomic limit), where the EBR decomposition of electronic states is not consistent with the atomic valence-electron band representations. In the work, we identify that the unconventional nature can also exist in phonon spectra, where the EBR decomposition of the phonon modes is not consistent with atomic vibration band representations (ABR). The unconventionality has two types: type I is on an empty site; type II is on an atom site with non-atomic vibration orbitals. Our detailed calculations show that black phosphorus (BP) and 1H-MoSe2 have unconventional both phonon spectra and electronic band structures. The BP has the type-I unconventional phonon spectrum, while 1H-MoSe2 has the type-II one. The obstructed phonon modes are obtained for two types of unconventional phonon spectra.

cond-mat.mtrl-sci↗

arXiv2024

Superconductivity in unconventional metals

Based on first-principles calculations, we demonstrate that 1H/2H-phase transition metal dichalcogenides MX2 (M=Nb,Ta; X=S,Se,Te) are unconventional metals, which have an empty-site band of $A_1'@1e$ elementary band representation at the Fermi level. The computed phonon dispersions indicate the stability of the system at high temperatures, while the presence of the soft phonon mode suggests a phase transition to the charge density wave state at low temperatures. Based on the Bardeen-Cooper-Schrieffer theory and computed electron-phonon coupling, our calculations show that the superconductivity (SC) in NbSe2 is mainly attributed to the soft phonon mode due to the half filling of the empty-site band. Accordingly, the SC has been predicted in unconventional metals TaNS monolayer and 2H-TaN2 bulk with computed $T_C=$ 10 K and 26 K respectively. These results demonstrate that the unconventional metals with partial filling of the empty-site band offer an attractive platform to search for superconductors.

cond-mat.mtrl-sci↗

arXiv2024

First-principles methodology for studying magnetotransport in narrow-gap semiconductors: an application to Zirconium Pentatelluride ZrTe5

The origin of anomalous resistivity peak and accompanied sign reversal of Hall resistivity of ZrTe$_5$ has been under debate for a long time. Although various theoretical models have been proposed to account for these intriguing transport properties, a systematic study from first principles view is still lacking. In this work, we present a first principles calculation combined with Boltzmann transport theory to investigate the transport properties in narrow-gap semiconductors at different temperatures and doping densities within the relaxation time approximation. Regarding the sensitive temperature-dependent chemical potential and relaxation time of semiconductors, we take proper approximation to simulate these two variables, and then comprehensively study the transport properties of ZrTe$_5$ both in the absence and presence of an applied magnetic field. Without introducing topological phases and correlation interactions, we qualitatively reproduced crucial features observed in experiments, including zero-field resistivity anomaly, nonlinear Hall resistivity with sign reversal, and non-saturating magnetoresistance at high temperatures. Our calculation allows a systematic interpretation of the observed properties in terms of multi-carrier and Fermi surface geometry. Our method can be extended to other narrow-gap semiconductors and further pave the way to explore interesting and novel transport properties of this field.

cond-mat.mtrl-sci↗