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Zoe J. Smith

Publications and source records attributed to Zoe J. Smith.

3 recordsLinked to original sources

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. We describe a powerful, yet straightforward, experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic impedance background correction procedure to measure the temperature-dependent impedance (magnitude and phase) of individual passive circuit elements mounted in a cryostat. We show how the model unambiguously identified a 20x drop in capacitance for 22 microF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with parasitic capacitance of order 300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to successfully measure 10 pF and 22 pF thin-film capacitors and 100 MOhm thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, the simple data acquisition method and robust analysis model were shown to effectively extend the accuracy of a simple benchtop LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies.

physics.ins-det

Comment on "Comments regarding "Transonic dislocation propagation in diamond" by Katagiri, et al. (Science 382, 69-72, 2023)" by Hawreliak, et al. (arXiv:2401.04213)

In their comment (1), Hawreliak et al. claims that our observation of stacking fault formation and transonic dislocation propagation in diamond (2) is not valid as they interpret the observed features as cracks. In this response letter, we describe our rationale for interpreting the observed features as stacking faults. We also address other points raised in their comments, including the clarifications of how the results of Makarov et al. (3) are not in conflict with our study.

cond-mat.mtrl-sci

Transonic Dislocation Propagation in Diamond

The motion of line defects (dislocations) has been studied for over 60 years but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motions between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We use femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.

cond-mat.mtrl-sci