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arXiv · 0705.2375

Spin Diode Based on Fe/MgO Double Tunnel Junction

A. Iovan·S. Andersson·Yu. G. Naidyuk·A. Vedyaev·B. Dieny·V. Korenivski
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Abstract

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.

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A. Iovan, S. Andersson, Yu. G. Naidyuk, A. Vedyaev, B. Dieny, V. Korenivski. 2007-10-18. Spin Diode Based on Fe/MgO Double Tunnel Junction. https://doi.org/10.1021/nl072676z

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