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arXiv · 0705.2579

Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment

Ryan Tu·Li Zhang·Yoshio Nishi·Hongjie Dai
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Abstract

Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.

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Ryan Tu, Li Zhang, Yoshio Nishi, Hongjie Dai. 2007-05-17. Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment. https://doi.org/10.1021/nl070378w

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