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arXiv · 0712.0820

The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics

Xiaosong Wu·Mike Sprinkle·Xuebin Li·Fan Ming·Claire Berger·Walt A. de Heer
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Abstract

Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctions, as a consequence of the band-gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 $^\circ$C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs, rivaling silicon. {\it In situ} local oxidation of patterned epitaxial graphene has been achieved.

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Xiaosong Wu, Mike Sprinkle, Xuebin Li, Fan Ming, Claire Berger, Walt A. de Heer. 2008-07-07. The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics. https://doi.org/10.1103/physrevlett.101.026801

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