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arXiv · 0808.1956

Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

Hidenori Hiramatsu·Takayoshi Katase·Toshio Kamiya·Masahiro Hirano·Hideo Hosono
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Abstract

Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.

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Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. 2008-09-19. Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO. https://doi.org/10.1063/1.2996591

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