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arXiv · 0810.4466

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

X. Hong·A. Posadas·K. Zou·C. H. Ahn·J. Zhu
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Abstract

The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, μreaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temperature. The temperature-dependent resistivity ρ(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8+/-0.5 eV.

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X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu. 2008-10-24. High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides. https://doi.org/10.1103/physrevlett.102.136808

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