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arXiv · 0903.1290

Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes

François Léonard·A. Alec Talin·B. S. Swartzentruber·S. T. Picraux
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Abstract

We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter.

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François Léonard, A. Alec Talin, B. S. Swartzentruber, S. T. Picraux. 2009-03-06. Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes. https://doi.org/10.1103/physrevlett.102.106805

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