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arXiv · 0908.1287

Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

O. V. Feklisova·E. B. Yakimov·L. V. Arapkina·V. A. Chapnin·K. V. Chizh·V. P. Kalinushkin·V. A. Yuryev
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Abstract

Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot (QD) density estimated from STM and the charge accumulated by QD layers as extracted from C-V characteristics was revealed. Temperature dependence of the C-V characteristics was studied. At low temperatures, the hysteresis was observed. DLTS spectra measured on the structures with different QD arrangements demonstrated essential distinctions.

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O. V. Feklisova, E. B. Yakimov, L. V. Arapkina, V. A. Chapnin, K. V. Chizh, V. P. Kalinushkin, V. A. Yuryev. 2009-08-10. Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures. https://doi.org/10.1016/j.physb.2009.08.164

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