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arXiv · 0909.1637

Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films

Tommi Riekkinen·Jan Saijets·Pasi Kostamo·Timo Sajavaara·Sebastiaan van Dijken
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Abstract

The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.

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Tommi Riekkinen, Jan Saijets, Pasi Kostamo, Timo Sajavaara, Sebastiaan van Dijken. 2009-09-09. Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films. https://doi.org/10.1080/00150190903412358

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