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arXiv · 1005.0941

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

R. Jany·M. Breitschaft·G. Hammerl·A. Horsche·C. Richter·S. Paetel·J. Mannhart·N. Stucki·N. Reyren·S. Gariglio·P. Zubko·A. D. Caviglia·J. -M. Triscone
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Abstract

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

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R. Jany, M. Breitschaft, G. Hammerl, A. Horsche, C. Richter, S. Paetel, J. Mannhart, N. Stucki, N. Reyren, S. Gariglio, P. Zubko, A. D. Caviglia, J. -M. Triscone. 2010-05-06. Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces. https://doi.org/10.1063/1.3428433

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