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arXiv · 1006.4913

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

Byungki Ryu·Hyeon-Kyun Noh·Eun-Ae Choi·K. J. Chang
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Abstract

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small potential barriers and can be captured by Vo in the dielectrics. While Vo(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that Vo(+2) can diffuse in amorphous phase, including hole accumulation near the interface under negative gate bias.

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Byungki Ryu, Hyeon-Kyun Noh, Eun-Ae Choi, K. J. Chang. 2010-06-25. O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. https://doi.org/10.1063/1.3464964

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