On the nature of large-scale defect accumulations in Czochralski-grown silicon

V. P. Kalinushkin; A. N. Buzynin; V. A. Yuryev; O. V. Astafiev; D. I. Murin

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arXiv · 1008.4694

On the nature of large-scale defect accumulations in Czochralski-grown silicon

V. P. Kalinushkin·A. N. Buzynin·V. A. Yuryev·O. V. Astafiev·D. I. Murin

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Abstract

Czochralski-grown boron-doped silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of electrically-active impurities detected in this material were found to be different in their nature and formation mechanisms from the well-known impurity clouds in a float zone-grown silicon. A classifcation of the large-scale impurity accumulations in CZ Si:B is made and point centers constituting them are analyzed in this paper. A model of the large-scale impurity accumulations in CZ-grown Si:B is also proposed.

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V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev, O. V. Astafiev, D. I. Murin. 2010-08-27. On the nature of large-scale defect accumulations in Czochralski-grown silicon. https://arxiv.org/abs/1008.4694

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