arXiv · 1008.5144
Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot
Abstract
Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade.
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Teck Seng Koh, C. B. Simmons, M. A. Eriksson, S. N. Coppersmith, Mark Friesen. 2011-07-13. Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot. https://doi.org/10.1103/physrevlett.106.186801
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