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arXiv · 1010.0913

Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric

Babak Fallahazad·Seyoung Kim·Luigi Colombo·Emanuel Tutuc
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Abstract

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.

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Babak Fallahazad, Seyoung Kim, Luigi Colombo, Emanuel Tutuc. 2010-10-05. Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric. https://doi.org/10.1063/1.3492843

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