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arXiv · 1101.3170

The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study

H. Q. Yuan·L. Jiao·J. Singleton·F. F. Balakirev·G. F. Chen·J. L. Luo·N. L. Wang
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Abstract

The longitudinal electrical resistivity and the transverse Hall resistivity of CeFeAsO are simultaneously measured up to a magnetic field of 45T using the facilities of pulsed magnetic field at Los Alamos. Distinct behaviour is observed in both the magnetoresistance Rxx(μ0H) and the Hall resistance Rxy(μ0H) while crossing the structural phase transition at Ts \approx 150K. At temperatures above Ts, little magnetoresistance is observed and the Hall resistivity follows linear field dependence. Upon cooling down the system below Ts, large magnetoresistance develops and the Hall resistivity deviates from the linear field dependence. Furthermore, we found that the transition at Ts is extremely robust against the external magnetic field. We argue that the magnetic state in CeFeAsO is unlikely a conventional type of spin-density-wave (SDW).

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H. Q. Yuan, L. Jiao, J. Singleton, F. F. Balakirev, G. F. Chen, J. L. Luo, N. L. Wang. 2011-01-17. The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study. https://doi.org/10.1088/1742-6596%2F273%2F1%2F012110

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