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arXiv · 1102.4554

Asymmetric pulsing for reliable operation of titanium/manganite memristors

F. Gomez-Marlasca·N. Ghenzi·P. Stoliar·M. J. Sánchez·M. J. Rozenberg·G. Leyva·P. Levy
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Abstract

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

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F. Gomez-Marlasca, N. Ghenzi, P. Stoliar, M. J. Sánchez, M. J. Rozenberg, G. Leyva, P. Levy. 2011-02-22. Asymmetric pulsing for reliable operation of titanium/manganite memristors. https://doi.org/10.1063/1.3565431

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