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arXiv · 1102.4753

Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling

Guido A. Intronati·Pablo I. Tamborenea·Dietmar Weinmann·Rodolfo A. Jalabert
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Abstract

We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of doped semiconductors. The Dresselhaus-type (i.e. allowed by bulk-inversion asymmetry) hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches employed to extract the spin-relaxation time from the effective Hamiltonian: an analytical diffusive-evolution calculation and a numerical finite-size scaling.

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Guido A. Intronati, Pablo I. Tamborenea, Dietmar Weinmann, Rodolfo A. Jalabert. 2011-02-23. Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling. https://doi.org/10.1103/physrevlett.108.016601

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