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arXiv · 1103.4510

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

A. S. Mayorov·R. V. Gorbachev·S. V. Morozov·L. Britnell·R. Jalil·L. A. Ponomarenko·P. Blake·K. S. Novoselov·K. Watanabe·T. Taniguchi·A. K. Geim
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Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

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A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S. Novoselov, K. Watanabe, T. Taniguchi, A. K. Geim. 2011-03-23. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. https://doi.org/10.1021/nl200758b

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