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arXiv · 1104.2658

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Y. Ando·K. Kasahara·K. Yamane·Y. Baba·Y. Maeda·Y. Hoshi·K. Sawano·M. Miyao·K. Hamaya
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Abstract

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

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Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, K. Hamaya. 2011-07-18. Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact. https://doi.org/10.1063/1.3607480

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