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arXiv · 1105.3760

Characterization of an InGaAs/InP single-photon detector at 200 MHz gate rate

Chris Healey·Itzel Lucio-Martinez·Michael R. E. Lamont·Xiaofan Mo·Wolfgang Tittel
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Abstract

We characterize a near-infrared single-photon detector based on an InGaAs/InP avalanche photodiode and the self-differencing post-processing technique. It operates at gate rates of 200 MHz and higher. The compact, integrated design employs printed circuit boards and features a semiconductor-based self-differencing subtraction implemented with a fully differential amplifier. At a single-photon detection efficiency of 6.4%, the detector has a dark count probability of 9x10^-7 per gate, an afterpulse probability of 6.3% per detection event, a detection time jitter of 150 ps, and a dead time of 5 ns (equivalent to one gate period). Furthermore, it can be operated as a standard photodiode, which benefits applications that require detecting single photons as well as strong light signals.

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Chris Healey, Itzel Lucio-Martinez, Michael R. E. Lamont, Xiaofan Mo, Wolfgang Tittel. 2011-05-18. Characterization of an InGaAs/InP single-photon detector at 200 MHz gate rate. https://arxiv.org/abs/1105.3760

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