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arXiv · 1110.5461

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

Nicolas Reckinger·Claude Poleunis·Emmanuel Dubois·Constantin Augustin Dutu·Xiaohui Tang·Arnaud Delcorte·Jean-Pierre Raskin
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Abstract

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.

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Nicolas Reckinger, Claude Poleunis, Emmanuel Dubois, Constantin Augustin Dutu, Xiaohui Tang, Arnaud Delcorte, Jean-Pierre Raskin. 2011-10-25. Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation. https://doi.org/10.1063/1.3608159

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