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arXiv · 1207.3512

Simulation of boron diffusion during low-temperature annealing of implanted silicon

O. I. Velichko·A. P. Kavaliova
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Abstract

Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials

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O. I. Velichko, A. P. Kavaliova. 2012-07-15. Simulation of boron diffusion during low-temperature annealing of implanted silicon. https://doi.org/10.1007/s00339-012-7378-4

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