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arXiv · 1211.6017

Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

Imtiaz Ahmed·Iftikhar Ahmad Niaz·Md. Hasibul Alam·Nadim Chowdhury·Zubair Al Azim·Quazi Deen Mohd Khosru
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Abstract

We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.

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Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam, Nadim Chowdhury, Zubair Al Azim, Quazi Deen Mohd Khosru. 2012-11-16. Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects. https://doi.org/10.1109/icedsa.2012.6507820

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