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arXiv · 1212.5143

Scanning tunneling microscopy with InAs nanowire tips

Kilian Flöhr·Kamil Sladek·H. Yusuf Günel·Mihail Ion Lepsa·Hilde Hardtdegen·Marcus Liebmann·Thomas Schäpers·Markus Morgenstern
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Abstract

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

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Kilian Flöhr, Kamil Sladek, H. Yusuf Günel, Mihail Ion Lepsa, Hilde Hardtdegen, Marcus Liebmann, Thomas Schäpers, Markus Morgenstern. 2012-12-20. Scanning tunneling microscopy with InAs nanowire tips. https://doi.org/10.1063/1.4769450

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