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arXiv · 1304.5567

Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

Deep Jariwala·Vinod K. Sangwan·Dattatray J. Late·James E. Johns·Vinayak P. Dravid·Tobin J. Marks·Lincoln J. Lauhon·Mark C. Hersam
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Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

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Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam. 2013-04-20. Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors. https://doi.org/10.1063/1.4803920

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