Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Thomas Poehlsen; Eckhart Fretwurst; Robert Klanner; Joern Schwandt; Jiaguo Zhang

doi:10.1016/j.nima.2013.03.035

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arXiv · 1305.0398

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

Thomas Poehlsen·Eckhart Fretwurst·Robert Klanner·Joern Schwandt·Jiaguo Zhang

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Abstract

The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses of 660 nm wavelength, which has an absorption length of 3.5 um in silicon at room temperature. The paper describes the measurement and analysis techniques used to determine the number of electrons and holes collected. Depending on biasing history, humidity and irradiation, incomplete collection of either electrons or holes is observed. The charge losses change with time. The time constants are different for electrons and holes and increase by two orders of magnitude when reducing the relative humidity from about 80 % to less than 1 %. An attempt to interpret these results is presented.

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Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner, Joern Schwandt, Jiaguo Zhang. 2013-05-02. Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors. https://doi.org/10.1016/j.nima.2013.03.035

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