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arXiv · 1305.4946

Direct observation of nanometer-scale Joule and Peltier effects in phase change memory devices

Kyle L. Grosse·Feng Xiong·Sungduk Hong·William P. King·Eric Pop
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Abstract

We measure power dissipation in phase change memory (PCM) devices by scanning Joule ex-pansion microscopy (SJEM) with ~50 nm spatial and 0.2 K temperature resolution. The temperature rise in the Ge2Sb2Te5 (GST) is dominated by Joule heating, but at the GST-TiW contacts it is a combination of Peltier and current crowding effects. Comparison of SJEM and electrical characterization with simulations of the PCM devices uncovers a thermopower ~350 uV/K for 25 nm thick films of face centered-cubic crystallized GST, and contact resistance ~2.0 x 10^-8 Ohm-m2. Knowledge of such nanoscale Joule, Peltier, and current crowding effects is essential for energy-efficient design of future PCM technology.

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Kyle L. Grosse, Feng Xiong, Sungduk Hong, William P. King, Eric Pop. 2013-05-21. Direct observation of nanometer-scale Joule and Peltier effects in phase change memory devices. https://doi.org/10.1063/1.4803172

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