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arXiv · 1305.5069

Realization of a double barrier resonant tunneling diode for cavity polaritons

Hai Son Nguyen·Dmitry Vishnevsky·Chris Sturm·Dimitrii Tanese·Dmitry Solnyshkov·Elisabeth Galopin·Aristide Lemaître·Isabelle Sagnes·Alberto Amo·Guillaume Malpuech·Jacqueline Bloch
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Abstract

We report on the realization of a double barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We use a non-resonant beam can be used as an optical gate and control the device transmission. Finally we evidence distortion of the transmission profile when going to the high density regime, signature of polariton-polariton interactions.

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Hai Son Nguyen, Dmitry Vishnevsky, Chris Sturm, Dimitrii Tanese, Dmitry Solnyshkov, Elisabeth Galopin, Aristide Lemaître, Isabelle Sagnes, Alberto Amo, Guillaume Malpuech, Jacqueline Bloch. 2013-05-22. Realization of a double barrier resonant tunneling diode for cavity polaritons. https://doi.org/10.1103/physrevlett.110.236601

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