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arXiv · 1310.6494

p-type doping in CVD grown MoS2 using Nb

M. Laskar·D. N. Nath·L. Ma·E. Lee·C. H. Lee·T. Kent·Z. Yang·Rohan Mishra·Manuel A Roldan·Juan-Carlos Idrobo·Sokrates T. Pantelides·Stephen J. Pennycook·R. Myers·Y. Wu·S. Rajan
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Abstract

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

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M. Laskar, D. N. Nath, L. Ma, E. Lee, C. H. Lee, T. Kent, Z. Yang, Rohan Mishra, Manuel A Roldan, Juan-Carlos Idrobo, Sokrates T. Pantelides, Stephen J. Pennycook, R. Myers, Y. Wu, S. Rajan. 2013-10-24. p-type doping in CVD grown MoS2 using Nb. https://arxiv.org/abs/1310.6494

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