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arXiv · 1312.2835

Giant thermovoltage in single InAs-nanowire field-effect transistors

Stefano Roddaro·Daniele Ercolani·Mian Akif Safeen·Soile Suomalainen·Francesco Rossella·Francesco Giazotto·Lucia Sorba·Fabio Beltram
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Abstract

Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity between room temperature and 100K$. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.

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Stefano Roddaro, Daniele Ercolani, Mian Akif Safeen, Soile Suomalainen, Francesco Rossella, Francesco Giazotto, Lucia Sorba, Fabio Beltram. 2013-12-10. Giant thermovoltage in single InAs-nanowire field-effect transistors. https://doi.org/10.1021/nl401482p

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