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arXiv · 1402.2420

L-Shape based Layout Fracturing for E-Beam Lithography

Bei Yu·Jhih-Rong Gao·David Z. Pan
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Abstract

Layout fracturing is a fundamental step in mask data preparation and e-beam lithography (EBL) writing. To increase EBL throughput, recently a new L-shape writing strategy is proposed, which calls for new L-shape fracturing, versus the conventional rectangular fracturing. Meanwhile, during layout fracturing, one must minimize very small/narrow features, also called slivers, due to manufacturability concern. This paper addresses this new research problem of how to perform L-shaped fracturing with sliver minimization. We propose two novel algorithms. The first one, rectangular merging (RM), starts from a set of rectangular fractures and merges them optimally to form L-shape fracturing. The second algorithm, direct L-shape fracturing (DLF), directly and effectively fractures the input layouts into L-shapes with sliver minimization. The experimental results show that our algorithms are very effective.

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Bei Yu, Jhih-Rong Gao, David Z. Pan. 2014-02-11. L-Shape based Layout Fracturing for E-Beam Lithography. https://doi.org/10.1109/aspdac.2013.6509604

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