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arXiv · 1406.5257

Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor

Saeed Uz Zaman Khan·Md. Shafayat Hossain·Md. Obaidul Hossen·Fahim Ur Rahman·Rifat Zaman·Quazi D. M. Khosru
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Abstract

This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schrödinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.

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Saeed Uz Zaman Khan, Md. Shafayat Hossain, Md. Obaidul Hossen, Fahim Ur Rahman, Rifat Zaman, Quazi D. M. Khosru. 2014-06-20. Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor. https://arxiv.org/abs/1406.5257

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