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arXiv · 1410.2000

Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films

Hong-Chao Liu·Hai-Zhou Lu·Hong-Tao He·Baikui Li·Shi-Guang Liu·Qing Lin He·Gan Wang·Iam Keong Sou·Shun-Qing Shen·Jiannong Wang
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Abstract

Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak anti-localization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.

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Hong-Chao Liu, Hai-Zhou Lu, Hong-Tao He, Baikui Li, Shi-Guang Liu, Qing Lin He, Gan Wang, Iam Keong Sou, Shun-Qing Shen, Jiannong Wang. 2014-10-08. Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films. https://doi.org/10.1021/nn504014e

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