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Jiannong Wang

Publications and source records attributed to Jiannong Wang.

18 recordsLinked to original sources
arXiv2024

Hexagonal network of photocurrent enhancement in few-layer graphene/InGaN quantum dot junctions

Strain in two-dimensional (2D) materials has attracted particular attention owing to the remarkable modification of electronic and optical properties. However, emergent electromechanical phenomena and hidden mechanisms, such as strain-superlattice-induced topological states or flexoelectricity under strain gradient, remain under debate. Here, using scanning photocurrent microscopy, we observe significant photocurrent enhancement in hybrid vertical junction devices made of strained few-layer graphene and InGaN quantum dots. Optoelectronic response and photoluminescence measurements demonstrate a possible mechanism closely tied to the flexoelectric effect in few-layer graphene, where the strain can induce a lateral built-in electric field and assist the separation of electron-hole pairs. Photocurrent mapping reveals an unprecedentedly ordered hexagonal network, suggesting the potential to create a superlattice by strain engineering. Our work provides insights into optoelectronic phenomena in the presence of strain and paves the way for practical applications associated with strained 2D materials.

cond-mat.mes-hall↗
arXiv2024

In-situ Formation of Superconducting FeTe/layered-MnTe heterostructures

Manganese telluride (MnTe) has garnered strong interest recently for its antiferromagnetic semiconductor properties, which are promising for applications in spintronics, data storage, and quantum computing. In this study, we discovered that the deposition of FeTe at 300oC onto zinc-blende MnTe (ZB-MnTe) via molecular beam epitaxy (MBE) results in a phase transition from ZB-MnTe to a layered MnTe (l-MnTe) phase with van der Waals (vdW) gaps, which is a previously unreported phase of MnTe. The l-MnTe phase was characterized using cross-sectional high-angle annular dark-field (HAADF) imaging, energy-dispersive X-ray spectroscopy (EDS) mapping, and X-ray photoelectron spectroscopy (XPS). The Fe/Te flux ratio during FeTe deposition was found to be critical to the phase transition, an increased Fe/Te flux ratio used for the FeTe growth leads to localized formation of layered Mn4Te3 (l-Mn4Te3), while a decreased Fe/Te flux ratio only generates a single monolayer of l-MnTe at the interface and the rest turns into a distorted ZB-MnTe (dZB-MnTe) phase. It was also found that FT-MT heterostructures grown at a lower substrate temperature of 250oC, as the Fe/Te flux ratio decreases, the ZB-MnTe layer was first transformed to dZB-MnTe and then to wurtzite MnTe (WZ-MnTe). The FeTe/l-MnTe heterostructure exhibits high-quality superconducting properties with a three-dimensional nature as demonstrated by its magneto-transport properties and there is evidence that l-MnTe seems to play a key role in inducing the observed superconductivity. Most importantly, this study reports the realization of layered structures of MnTe by an in-situ approach via chemical interactions, which might be further applied to generating unprecedented phases of materials under certain conditions.

cond-mat.supr-con↗
arXiv2023

Edelstein effect induced superconducting diode effect in inversion symmetry breaking MoTe$_2$ Josephson junctions

Superconducting diode effect (SDE) with nonreciprocal supercurrent transport has attracted intense attention recently, not only for its intriguing physics, but also for its great application potential in superconducting circuits. It is revealed in this work that planar Josephson junctions (JJs) based on type-II Weyl semimetal (WSM) MoTe$_2$ can exhibit a prominent SDE due to the emergence of asymmetric Josephson effect (AJE) in perpendicular magnetic fields. The AJE manifests itself in a very large asymmetry in the critical supercurrents with respect to the current direction. The sign of this asymmetry can also be effectively modulated by the external magnetic field. Considering the special noncentrosymmetric crystal symmetry of MoTe$_2$, this AJE is understood in terms of the Edelstein effect, which induces a nontrivial phase shift in the current phase relation of the junctions. Besides these, it is further demonstrated that the rectification of supercurrent in such MoTe$_2$ JJs with the rectification efficiency up to 50.4%, unveiling the great application potential of WSMs in superconducting electronics.

cond-mat.supr-con↗
arXiv2023

Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4

The study of quantum geometry effects in materials has been one of the most important research directions in recent decades. The quantum geometry of a material is characterized by the quantum geometry tensor of the Bloch states. The imaginary part of the quantum geometry tensor gives rise to the Berry curvature while the real part gives rise to the quantum metric. While Berry curvature has been well studied in the past decades, the experimental investigation on the quantum metric effects is only at its infancy stage. In this work, we measure the nonlinear transport of bulk MnBi${_2}$Te${_4}$, which is a topological anti-ferromagnet. We found that the second order nonlinear responses are negligible as required by inversion symmetry, the third-order nonlinear responses are finite. The measured third-harmonic longitudinal ($V_{xx}^{3ω}$) and transverse ($V_{xy}^{3ω}$) voltages with frequency 3w, driven by an a.c. current with frequency w, show an intimate connection with magnetic transitions of MnBi${_2}$Te${_4}$ flakes. Their magnitudes change abruptly as MnBi${_2}$Te${_4}$ flakes go through magnetic transitions from an AFM state to a canted AFM state and to a FM state. In addition, the measured $V_{xx}^{3ω}$ is an even function of the applied magnetic field B while $V_{xy}^{3ω}$ is odd in B. Amazingly, the field dependence of the third-order responses as a function of the magnetic field suggests that $V_{xx}^{3ω}$ is induced by quantum metric quadrupole and $V_{xy}^{3ω}$ is induced by Berry curvature quadrupole. Therefore, the quadrupoles of both the real and the imaginary part of the quantum geometry tensor of bulk MnBi${_2}$Te${_4}$ are revealed through the third order nonlinear transport measurements. This work greatly advanced our understanding on the connections between the higher order moments of quantum geometry and nonlinear transport.

cond-mat.mtrl-sci↗
arXiv2023

Proximity-induced quasi-one-dimensional superconducting quantum anomalous Hall state: a promising scalable top-down approach towards localized Majorana modes

In this work, ~100 nm wide quantum anomalous Hall insulator (QAHI) nanoribbons are etched from a two-dimensional QAHI film. One part of the nanoribbon is covered with superconducting Nb, while the other part is connected to an Au lead via two-dimensional QAHI regions. Andreev reflection spectroscopy measurements were performed, and multiple in-gap conductance peaks were observed in three different devices. In the presence of an increasing magnetic field perpendicular to the QAHI film, the multiple in-gap peak structure evolves into a single zero-bias conductance peak (ZBCP). Theoretical simulations suggest that the measurements are consistent with the scenario that the increasing magnetic field drives the nanoribbons from a multi-channel occupied regime to a single channel occupied regime, and that the ZBCP may be induced by zero energy Majorana modes as previously predicted [24]. Although further experiments are needed to clarify the nature of the ZBCP, we provide initial evidence that quasi-1D QAHI nanoribbon/superconductor heterostructures are new and promising platforms for realizing zero-energy Majorana modes.

cond-mat.supr-con↗
arXiv2021

Role of topological surface states and mirror symmetry in topological crystalline insulator SnTe as an efficient electrocatalyst

The surface orientation dependence on the hydrogen evolution reaction (HER) performance of topological crystalline insulator (TCI) SnTe thin films is studied. Their intrinsic activities are determined by linear sweep voltammetry and cyclic voltammetry measurements. It is found that SnTe (001) and (111) surfaces exhibit intrinsic activities significantly larger than the (211) surface. Density functional theory calculations reveal that pure (001) and (111) surfaces are not good electrocatalysts, while those with Sn vacancies or partially oxidized surfaces, with the latter as evidenced by X-ray photoelectron spectroscopy, have high activity. The calculated overall performance of the (001) and (111) surfaces with robust topological surface states (TSSs) is better than that of the lowly symmetric (211) surface with fragile or without TSSs, which is further supported by their measured weak antilocalization strength. The high HER activity of SnTe (001) and (111) is attributed to the enhanced charge transfer between H atoms and TSSs. We also address the effect of possible surface facets and the contrast of the HER activity of the available active sites among the three samples. Our study demonstrates that the TSSs and mirror symmetry of TCIs expedite their HER activity.

cond-mat.mtrl-sci↗
arXiv2019

Studies on the origin of the interfacial superconductivity of Sb2Te3/Fe1+yTe heterostructures

The recent discovery of the interfacial superconductivity (SC) of the Bi2Te3/Fe1+yTe heterostructure has attracted extensive studies due to its potential as a novel platform for trapping and controlling Majorana fermions. Here we present studies of another topological insulator (TI)/Fe1+yTe heterostructure, Sb2Te3/Fe1+yTe, which also enjoys an interfacial two-dimensional SC. The results of transport measurements support that the reduction of excess Fe concentration of the Fe1+yTe layer not only increases the fluctuation of its antiferromagnetic (AFM) order but also enhances the quality of the SC of this heterostructure system. On the other hand, the interfacial SC of this heterostructure was found to have a wider-ranging TI-layer thickness dependence than that of the Bi2Te3/Fe1+yTe heterostructure, which is believed to be attributed to the much higher bulk conductivity of Sb2Te3 that enhances indirect coupling between its top and bottom topological surface states (TSSs). Our results provide the evidence of the interplay among the AFM order, itinerant carries from the TSSs and the induced interfacial SC of the TI/Fe1+yTe heterostructure system.

cond-mat.supr-con↗
arXiv2019

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor n decreases and the effective SBH increases at high temperatures. The temperature dependences of n and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni-AlN Schottky junction from the inhomogeneity analysis of the current-voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the current-voltage characteristics of inhomogeneous SBDs.

physics.app-ph↗
arXiv2018

Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

cond-mat.mes-hall↗
arXiv2018

Interfacial bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots

Van der Waals heterostructures usually formed using atomic thin transition metal dichalcogenides (TMDCs) with a direct bandgap in the near-infrared to the visible range are promising candidates for low-dimensional optoelectronic applications. The interlayer interaction or coupling between two-dimensional (2D) layer and the substrate or between adjacent 2D layers plays an important role in modifying properties of the individual 2D material or device performances through Coulomb interaction or forming interlayer excitons. Here, we report the realization of quasi zero-dimensional (0D) photon emission of WS2 in a coupled hybrid structure of monolayer WS2 and InGaN quantum dots (QDs). An interfacial bound exciton, i.e., coupling between excitons in WS2 and the electrons in QDs has been identified. The emission of this interfacial bound exciton inherits the 0-D confinement of QDs as well as the spin-valley physics of excitons in monolayer WS2. The effective coupling between 2D materials and conventional semiconductors observed in this work provides an effective way to realize 0D emission of 2D materials and opens the potential of compact on-chip integration of valleytronics and conventional electronics/optoelectronics.

cond-mat.mes-hall↗
arXiv2017

Reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure under hydrostatic pressure

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We trace the pressure dependence of a superconducting twin gap structure by Andreev reflection point contact spectroscopy (PCARS), which shows that a large superconducting gap associated with the interfacial superconductivity increases along with Tc. A second smaller gap, which is attributed to proximity-induced superconductivity in the TI layer, increases first, but then reaches a maximum and appears to be gradually suppressed at higher pressure. We interpret our data in the context of a pressure-induced doping effect of the interface, in which charge is transferred from the TI layer to the interface and the interfacial superconductivity is enhanced. This demonstrates the important role of the TI in the interfacial superconductivity mechanism.

cond-mat.supr-con↗
arXiv2016

The origin of bias independent conductance plateaus and zero bias conductance peaks in Bi2Se3/NbSe2 hybrid structures

Superconducting proximity effect (SPE) in topological insulator (TI) and superconductor (SC) hybrid structure has attracted intense attention in recent years in an effort to search for mysterious Majorana fermions (MFs) in condensed matter systems. Here we report on the SPE in a Bi2Se3/NbSe2 junction fabricated with an all-dry transfer method. Resulting from the highly transparent interface, two sharp resistance drops are observed at 7 K and 2 K, respectively, corresponding to the superconducting transition of NbSe2 flake and the SPE induced superconductivity in Bi2Se3 flake. Experimentally measured differential conductance spectra exhibit a bias-independent conductance plateau (BICP) in the vicinity of zero bias below 7 K. As temperatures further decrease a zero bias conductance peak (ZBCP) emerges from the plateau and becomes more enhanced and sharpened at lower temperatures. Our numerically simulated differential conductance spectra reproduce the observed BICP and ZBCP and show that the SPE in topological surface states (TSS) is much stronger than that in the bulk states of Bi2Se3. The SPE induced superconducting gap for the TSS of Bi2Se3 is comparable to that of NbSe2 and gives rise to the observed BICP below 7 K. In contrast, the SPE induced superconducting gap for the bulk states of Bi2Se3 is an order of magnitude smaller than that of NbSe2 and superconducting TSS. These weakly paired bulk states in Bi2Se3 give rise to the ZBCP below 2 K. Our study has clearly unveiled the different roles of TSS and bulk stats in SPE, clarified the physical origin of the SPE induced features, and shined light on further investigation of SPE and MF in TI/SC hybrid structures.

cond-mat.supr-con↗
arXiv2016

Robust two-dimensional superconductivity and vortex system in Bi2Te3/FeTe heterostructures

The discovery of two-dimensional superconductivity in Bi2Te3/FeTe heterostructure provides a new platform for the search of Majorana fermions in condensed matter systems. Since Majorana fermions are expected to reside at the core of the vortices, a close examination of the vortex dynamics in superconducting interface is of paramount importance. Here, we report the robustness of the interfacial superconductivity and 2D vortex dynamics in four as-grown and aged Bi2Te3/FeTe heterostructure with different Bi2Te3 epilayer thickness (3, 5, 7, 14 nm). After two years' air exposure, superconductivity remains robust even when the thickness of Bi2Te3 epilayer is down to 3 nm. Meanwhile, a new feature at ~13 K is induced in the aged samples, and the high field studies reveal its relevance to superconductivity. The resistance of all as-grown and aged heterostructures, just below the superconducting transition temperature follows the Arrhenius relation, indicating the thermally activated flux flow behavior at the interface of Bi2Te3 and FeTe. Moreover, the activation energy exhibits a logarithmic dependence on the magnetic field, providing a compelling evidence for the 2D vortex dynamics in this novel system. The weak disorder associated with aging-induced Te vacancies is possibly responsible for these observed phenomena.

cond-mat.mtrl-sci↗
arXiv2015

Negative Magnetoresistance in Dirac Semimetal Cd3As2

A large negative magnetoresistance is anticipated in topological semimetals in the parallel magnetic and electric field configuration as a consequence of the nontrivial topological properties. The negative magnetoresistance is believed to demonstrate the chiral anomaly, a long-sought high-energy physics effect, in solid-state systems. Recent experiments reveal that Cd3As2, a Dirac topological semimetal, has the record-high mobility and exhibits positive linear magnetoresistance in the orthogonal magnetic and electric field configuration. However, the negative magnetoresistance in the parallel magnetic and electric field configuration remains unveiled. Here, we report the observation of the negative magnetoresistance in Cd3As2 microribbons in the parallel magnetic and electric field configuration as large as 66% at 50 K and even visible at room temperatures. The observed negative magnetoresistance is sensitive to the angle between magnetic and electrical field, robust against temperature, and dependent on the carrier density. We have found that carrier densities of our Cd3As2 samples obey an Arrhenius's law, decreasing from 3.0x10^17 cm^-3 at 300 K to 2.2x10^16 cm^-3 below 50 K. The low carrier densities result in the large values of the negative magnetoresistance. We therefore attribute the observed negative magnetoresistance to the chiral anomaly. Furthermore, in the perpendicular magnetic and electric field configuration a positive non-saturating linear magnetoresistance up to 1670% at 14 T and 2 K is also observed. This work demonstrates potential applications of topological semimetals in magnetic devices.

cond-mat.str-el↗
arXiv2014

Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films

Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak anti-localization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.

cond-mat.mes-hall↗
arXiv2014

Two-dimensional superconductivity at the interface of a Bi2Te3/FeTe heterostructure

Superconductivity at the interface of a heterostructure confined to nanometer-sized scale offers unique opportunities to study the exotic physics of two-dimensional superconductivity. The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here, we report transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface induced by the Bi2Te3 epilayer with thickness even down to one quintuple layer. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi2Te3, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.

cond-mat.supr-con↗
arXiv2007

Unambiguous symmetry assignment for the top valence band of ZnO by magneto-optical studies of the free A-exciton state

We studied the circular polarization and angular dependences of the magneto-photoluminescence spectra of the free A-exciton 1S state in wurtzite ZnO at T = 5 K. The circular polarization properties of the spectra clearly indicate that the top valence band has Gamma_7 symmetry. The out-of-plane component of the magnetic field, which is parallel to the sample's c axis, leads to linear Zeeman splitting of both the dipole-allowed Gamma_5 exciton state and the weakly allowed Gamma_1/Gamma_2 exciton states. The in-plane field, which is perpendicular to the c axis, increases the oscillator strength of the weak Gamma_1/Gamma_2 states by forming a mixed exciton state.

cond-mat.mtrl-sci↗