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arXiv · 1410.8228

Highly resistive epitaxial Mg-doped GdN thin films

C. -M. Lee·H. Warring·S. Vézian·B. Damilano·S. Granville·M. Al Khalfioui·Y. Cordier·H. J. Trodahl·B. J. Ruck·F. Natali
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Abstract

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].

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C. -M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H. J. Trodahl, B. J. Ruck, F. Natali. 2014-10-30. Highly resistive epitaxial Mg-doped GdN thin films. https://doi.org/10.1063/1.4905598

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