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arXiv · 1412.6271

Nano-artifact metrics based on random collapse of resist

Tsutomu Matsumoto·Morihisa Hoga·Yasuyuki Ohyagi·Mikio Ishikawa·Makoto Naruse·Kenta Hanaki·Ryosuke Suzuki·Daiki Sekiguchi·Naoya Tate·Motoichi Ohtsu
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Abstract

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

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Tsutomu Matsumoto, Morihisa Hoga, Yasuyuki Ohyagi, Mikio Ishikawa, Makoto Naruse, Kenta Hanaki, Ryosuke Suzuki, Daiki Sekiguchi, Naoya Tate, Motoichi Ohtsu. 2014-12-19. Nano-artifact metrics based on random collapse of resist. https://doi.org/10.1038/srep06142

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