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arXiv · 1503.05700

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

V. A. Yuryev·K. V. Chizh·V. A. Chapnin·S. A. Mironov·V. P. Dubkov·O. V. Uvarov·V. P. Kalinushkin·V. M. Senkov·O. Y. Nalivaiko·A. G. Novikau·P. I. Gaiduk
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Abstract

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about $-$2%/$^{\circ}$C in the temperature interval from 25 to 50$^{\circ}$C.

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V. A. Yuryev, K. V. Chizh, V. A. Chapnin, S. A. Mironov, V. P. Dubkov, O. V. Uvarov, V. P. Kalinushkin, V. M. Senkov, O. Y. Nalivaiko, A. G. Novikau, P. I. Gaiduk. 2015-05-13. Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers. https://doi.org/10.1063/1.4921595

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