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arXiv · 1504.01881

Remote Surface Roughness Scattering in FDSOI devices with high-$κ$/SiO$_2$ gate stacks

Y. M. Niquet·I. Duchemin·V. -H. Nguyen·F. Triozon·D. Rideau
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Abstract

We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO$_2$ and SiO$_2$/HfO$_2$ interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO$_2$ interface and SiO$_2$ thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-$κ$/Metal gate technologies.

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Y. M. Niquet, I. Duchemin, V. -H. Nguyen, F. Triozon, D. Rideau. 2015-04-08. Remote Surface Roughness Scattering in FDSOI devices with high-$κ$/SiO$_2$ gate stacks. https://doi.org/10.1063/1.4906199

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