Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning

Shovon Pal; Hanond Nong; Sergej Markmann; Nadezhda Kukharchyk; Sascha R. Valentin; Sven Scholz; Arne Ludwig; Claudia Bock; Ulrich Kunze; Andreas D. Wieck; Nathan Jukam

arXiv · 1504.03569

Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning

Shovon Pal·Hanond Nong·Sergej Markmann·Nadezhda Kukharchyk·Sascha R. Valentin·Sven Scholz·Arne Ludwig·Claudia Bock·Ulrich Kunze·Andreas D. Wieck·Nathan Jukam

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Abstract

The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gates. An asymmetric triangular potential in the heterostructure enables ultrawide electrical tuning of ISR which is an order of magnitude higher as compared to the equivalent square well. For a single triangular well, we achieve a coupling strength of 0.52 THz, with a normalized coupling ratio of 0.26.

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Shovon Pal, Hanond Nong, Sergej Markmann, Nadezhda Kukharchyk, Sascha R. Valentin, Sven Scholz, Arne Ludwig, Claudia Bock, Ulrich Kunze, Andreas D. Wieck, Nathan Jukam. 2015-04-14. Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning. https://arxiv.org/abs/1504.03569

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