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arXiv · 1507.05403

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

Zefei Wu·Yanqing Guo·Yuzheng Guo·Rui Huang·Jie Song·Zhenxu Lin·Huanhuan Lu·Jiangxiazi Lin·Shuigang Xu·Yu Han·Hongliang Li·Yuan Cai·Chun Cheng·Dangsheng Su·John Robertson·Ning Wang
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Abstract

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to monolayer graphene growth on SiO2/Si. The produced monolayer graphene exhibits high carrier mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer quantum oscillations.

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Zefei Wu, Yanqing Guo, Yuzheng Guo, Rui Huang, Jie Song, Zhenxu Lin, Huanhuan Lu, Jiangxiazi Lin, Shuigang Xu, Yu Han, Hongliang Li, Yuan Cai, Chun Cheng, Dangsheng Su, John Robertson, Ning Wang. 2015-07-20. Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment. https://doi.org/10.1039/c5nr05393e

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