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arXiv · 1508.06834

High thermoelectric performance can be achieved in black phosphorus

J. Zhang·H. J. Liu·L. Cheng·J. Wei·J. H. Liang·D. D. Fan·P. H. Jiang·L. Sun·J. Shi
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Abstract

Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by substituting P atom with Sb atom, giving nominal formula of P0.75Sb0.25. Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structure or seeking for low-dimensional systems.

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J. Zhang, H. J. Liu, L. Cheng, J. Wei, J. H. Liang, D. D. Fan, P. H. Jiang, L. Sun, J. Shi. 2015-08-27. High thermoelectric performance can be achieved in black phosphorus. https://doi.org/10.1039/c5tc03238e

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